N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)

* 1 Chip Dual Type * Recommended for First Differential Stages of DC Amplifiers * Good Pair Characteristics * Complementary to 2SJ109

HSTM PACKAGE SERIES

Application VHF Amp, FM RF MIX VHF RF Amp, VHF TV Application High lyfs| Low Noise High lyfst Low Noise High lyfs! Low Noise High lyfs! Low Noise 1 Chip High Yfs! Low Noise 1 Chip High Yfs! Low Noise Application Condenser Microphone Condenser Microphone Condenser Microphone

N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS)

N-CHANNEL SILICON POWER MOSFET

FUJI POWER MOSFET Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Super FAP-G Series

Silicon N-channel power MOSFET

For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply Features Gate-source surrender voltage VGSS : ± 30 guaranteed Avalanche energy capacity guaranteed: EAS > 986 mJ High-speed switching: tf = 39 ns

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A) •Low C iss: C iss= 5500 pF TYP.

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low On-state resistance RDS(on)1=5.3mÙMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mÙMAX.(VGS=4.5V,ID=42A) Low Ciss:Ciss = 5500 pF TYP.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A) •Low C iss: C iss= 5500 pF TYP.

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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Silicon N-channel power MOSFET

SWITCHING N-CHANNEL POWER MOS FET

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

SWITCHING N-CHANNEL POWER MOS FET

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isc N-Channel MOSFET Transistor

文件：401.55 Kbytes Page：2 Pages