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型号 功能描述 生产厂家 企业 LOGO 操作
2SK3899

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A) •Low C iss: C iss= 5500 pF TYP.

NEC

瑞萨

2SK3899

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)

RENESAS

瑞萨

2SK3899

MOS Field Effect Transistor

MOS Field Effect Transistor Features Low On-state resistance RDS(on)1=5.3mÙMAX.(VGS=10V,ID=42A) RDS(on)2=6.5mÙMAX.(VGS=4.5V,ID=42A) Low Ciss:Ciss = 5500 pF TYP.

KEXIN

科信电子

2SK3899

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION\nThe 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n•Super low on-state resistance\n  RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A)\n  RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A)\n•Low C iss: C iss= 5500 pF TYP.\n•Built-in gate pr •Super low on-state resistance\n  RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A)\n  RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A)\n•Low C iss: C iss= 5500 pF TYP.\n•Built-in gate protection diode;

RENESAS

瑞萨

Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263

The 2SK3899-ZK is a Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263. • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)\n• Low Ciss: Ciss = 5500 pF TYP.\n• Built-in gate protection diode\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SK3899 Data SheetPDF281 ;

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 6.5 mΩ MAX. (VGS = 4.5 V, ID = 42 A)

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES •Super low on-state resistance RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A) RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A) •Low C iss: C iss= 5500 pF TYP.

NEC

瑞萨

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:288.54 Kbytes Page:10 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:401.55 Kbytes Page:2 Pages

ISC

无锡固电

更新时间:2026-5-19 20:12:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
17+
TO-263
16000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NEC
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
25+
TO-263
1030
全新原装正品支持含税
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
RENESAS
26+
TO-263
360000
进口原装现货
RENESAS/瑞萨
24+
TO-263
8540
只做原装正品现货或订货假一赔十!
RENESAS/瑞萨
23+
TO-263
66600
专业芯片配单原装正品假一罚十
NEC
24+
TO-263
8866
RENESAS
22+
TO-263
20000
公司只有原装 品质保证
NEC
18+
TO-263
1033
全新 发货1-2天

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