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2SK375价格

参考价格:¥6.9218

型号:2SK3756(TE12L,F) 品牌:Toshiba 备注:这里有2SK375多少钱,2026年最近7天走势,今日出价,今日竞价,2SK375批发/采购报价,2SK375行情走势销售排行榜,2SK375报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK375

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

HITACHIHitachi Semiconductor

日立日立公司

2SK375

HIGH SPEED POWER SWITCHING

HITACHIHitachi Semiconductor

日立日立公司

N-CHANNEL SILICON POWER MOSFET

[Fuji] Features • High speed switching • Low on-resistance • No secondary breadown • Low driving power • Avalanche-proof Applications • Switching regulators • DC-DC converters • UPS (Uninterruptible Power Supply)

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon N Channel MOS Type Relay Drive, DC−DC Converter and Motor Drive Applications

Relay Drive, DC−DC Converter and Motor Drive Applications • 4.5-V gate drive • Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement-model: Vth = 1.3 to 2.5 V (VDS =

TOSHIBA

东芝

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A) •

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A) • Low Ciss: Ciss = 1200 pF TYP. •

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

ISC

无锡固电

Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 500 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS??

Switching Regulator Applications ● Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) ● High forward transfer admittance: |Yfs| = 6.5S (typ.) ● Low leakage current: IDSS = 100 μ A (VDS = 500 V) ● Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 850mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

HITACHIHitachi Semiconductor

日立日立公司

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

HITACHIHitachi Semiconductor

日立日立公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

文件:131.97 Kbytes Page:4 Pages

FUJI

富士通

Relay Drive, DC?묭C Converter

文件:139.7 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Relay Drive, DC−DC Converter and Motor Drive Applications

TOSHIBA

东芝

Relay Drive, DC?묭C Converter

文件:139.7 Kbytes Page:3 Pages

TOSHIBA

东芝

Power MOSFETs-Power MOSFETs for Automotive

RENESAS

瑞萨

N-Channel 60-V (D-S) MOSFET

文件:949.7 Kbytes Page:7 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET

文件:303.28 Kbytes Page:10 Pages

RENESAS

瑞萨

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个

RENESAS

瑞萨

Switching Regulator Applications

文件:237.01 Kbytes Page:6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件:237.01 Kbytes Page:6 Pages

TOSHIBA

东芝

2SK375产品属性

  • 类型

    描述

  • RDS (ON) (mohm) max. @10V or 8V:

    12

  • Package Type:

    MP-45F/TO-220

  • Ciss (pF) typ.:

    1200

  • Nch/Pch:

    Nch

  • Vgs (off) (V) max.:

    2.5

  • Number of Channels:

    Single

  • VGSS (V):

    20

  • Automotive:

    YES

  • Pch (W):

    24

  • VDSS (V) max.:

    40

  • Application:

    Low Voltage General Switching

  • ID (A):

    45

  • Mounting Type:

    Through Hole

  • RDS (ON) (mohm) max. @4V or 4.5V:

    18

  • QG (nC) typ.:

    25.5

更新时间:2026-5-24 23:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
24+
SOT-89
9700
绝对原装正品现货假一罚十
TOSHIBA
2016+
SOT-89
20000
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA/东芝
2023+
SOT89
15000
一级代理优势现货,全新正品直营店
NEC
26+
TO-220F
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
TOSHIBA/东芝
2025+
SOD-89
5000
原装进口价格优 请找坤融电子!
NEC
24+
TO-220F
8866
TOSHIBA
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
TOSHIBA/东芝
24+
SOT-89
9600
原装现货,优势供应,支持实单!
TOSHIBA
18+
TO-220F
85600
保证进口原装可开17%增值税发票
TOSHIBA
24+
con
10
现货常备产品原装可到京北通宇商城查价格

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