2SK375价格
参考价格:¥6.9218
型号:2SK3756(TE12L,F) 品牌:Toshiba 备注:这里有2SK375多少钱,2026年最近7天走势,今日出价,今日竞价,2SK375批发/采购报价,2SK375行情走势销售排行榜,2SK375报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK375 | HIGH SPEED POWER SWITCHING SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING | HITACHIHitachi Semiconductor 日立日立公司 | ||
2SK375 | HIGH SPEED POWER SWITCHING | HITACHIHitachi Semiconductor 日立日立公司 | ||
N-CHANNEL SILICON POWER MOSFET [Fuji] Features • High speed switching • Low on-resistance • No secondary breadown • Low driving power • Avalanche-proof Applications • Switching regulators • DC-DC converters • UPS (Uninterruptible Power Supply) | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Silicon N Channel MOS Type Relay Drive, DC−DC Converter and Motor Drive Applications Relay Drive, DC−DC Converter and Motor Drive Applications • 4.5-V gate drive • Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement-model: Vth = 1.3 to 2.5 V (VDS = | TOSHIBA 东芝 | |||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A) • | RENESAS 瑞萨 | |||
SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A) • Low Ciss: Ciss = 1200 pF TYP. • | NEC 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC | ISC 无锡固电 | |||
Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Silicon N-Channel MOS Type Switching Regulator Applications Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) | TOSHIBA 东芝 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Switching Regulator Applications Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 500 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) | TOSHIBA 东芝 | |||
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS?? Switching Regulator Applications ● Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) ● High forward transfer admittance: |Yfs| = 6.5S (typ.) ● Low leakage current: IDSS = 100 μ A (VDS = 500 V) ● Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) | TOSHIBA 东芝 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 850mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 1.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | |||
HIGH SPEED POWER SWITCHING SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING | HITACHIHitachi Semiconductor 日立日立公司 | |||
HIGH SPEED POWER SWITCHING SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING | HITACHIHitachi Semiconductor 日立日立公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 1.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | |||
N-CHANNEL SILICON POWER MOSFET 文件:131.97 Kbytes Page:4 Pages | FUJI 富士通 | |||
Relay Drive, DC?묭C Converter 文件:139.7 Kbytes Page:3 Pages | TOSHIBA 东芝 | |||
Silicon N Channel MOS Type Relay Drive, DC−DC Converter and Motor Drive Applications | TOSHIBA 东芝 | |||
Relay Drive, DC?묭C Converter 文件:139.7 Kbytes Page:3 Pages | TOSHIBA 东芝 | |||
Power MOSFETs-Power MOSFETs for Automotive | RENESAS 瑞萨 | |||
N-Channel 60-V (D-S) MOSFET 文件:949.7 Kbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
SWITCHING N-CHANNEL POWER MOS FET 文件:303.28 Kbytes Page:10 Pages | RENESAS 瑞萨 | |||
包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个 | RENESAS 瑞萨 | |||
Switching Regulator Applications 文件:237.01 Kbytes Page:6 Pages | TOSHIBA 东芝 | |||
Switching Regulator Applications 文件:237.01 Kbytes Page:6 Pages | TOSHIBA 东芝 |
2SK375产品属性
- 类型
描述
- RDS (ON) (mohm) max. @10V or 8V:
12
- Package Type:
MP-45F/TO-220
- Ciss (pF) typ.:
1200
- Nch/Pch:
Nch
- Vgs (off) (V) max.:
2.5
- Number of Channels:
Single
- VGSS (V):
20
- Automotive:
YES
- Pch (W):
24
- VDSS (V) max.:
40
- Application:
Low Voltage General Switching
- ID (A):
45
- Mounting Type:
Through Hole
- RDS (ON) (mohm) max. @4V or 4.5V:
18
- QG (nC) typ.:
25.5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
24+ |
SOT-89 |
9700 |
绝对原装正品现货假一罚十 |
|||
TOSHIBA |
2016+ |
SOT-89 |
20000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
TOSHIBA/东芝 |
2023+ |
SOT89 |
15000 |
一级代理优势现货,全新正品直营店 |
|||
NEC |
26+ |
TO-220F |
35890 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
TOSHIBA/东芝 |
2025+ |
SOD-89 |
5000 |
原装进口价格优 请找坤融电子! |
|||
NEC |
24+ |
TO-220F |
8866 |
||||
TOSHIBA |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
TOSHIBA/东芝 |
24+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
|||
TOSHIBA |
18+ |
TO-220F |
85600 |
保证进口原装可开17%增值税发票 |
|||
TOSHIBA |
24+ |
con |
10 |
现货常备产品原装可到京北通宇商城查价格 |
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2SK375规格书下载地址
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2SK375数据表相关新闻
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DdatasheetPDF页码索引
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