HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

N-CHANNEL SILICON POWER MOSFET

[Fuji] Features • High speed switching • Low on-resistance • No secondary breadown • Low driving power • Avalanche-proof Applications • Switching regulators • DC-DC converters • UPS (Uninterruptible Power Supply)

Silicon N Channel MOS Type Relay Drive, DC−DC Converter and Motor Drive Applications

Relay Drive, DC−DC Converter and Motor Drive Applications • 4.5-V gate drive • Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) • High forward transfer admittance: |Yfs| = 5.0 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement-model: Vth = 1.3 to 2.5 V (VDS =

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A) • Low Ciss: Ciss = 1200 pF TYP. •

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3755 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 12 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 23 A) •

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 45A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 12mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 500 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS??

Switching Regulator Applications ● Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) ● High forward transfer admittance: |Yfs| = 6.5S (typ.) ● Low leakage current: IDSS = 100 μ A (VDS = 500 V) ● Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 850mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.0Ω(Max) @ VGS= 15V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

N-CHANNEL SILICON POWER MOSFET

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Silicon N Channel MOS Type Relay Drive, DC−DC Converter and Motor Drive Applications

Relay Drive, DC?묭C Converter

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Relay Drive, DC?묭C Converter

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N-Channel 60-V (D-S) MOSFET

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Power MOSFETs-Power MOSFETs for Automotive

SWITCHING N-CHANNEL POWER MOS FET

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

Switching Regulator Applications

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Switching Regulator Applications

文件：237.01 Kbytes Page：6 Pages