位置：首页 > IC中文资料第1191页 > 2SK360
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK360 | Silicon N-Channel MOS FET Application VHF amplifier | HitachiHitachi Semiconductor 日立日立公司 |   | |
2SK360 | Silicon N-Channel MOS FET
| RENESAS 瑞萨 | | |
2SK360 | Silicon N-Channel MOS FET | RENESAS 瑞萨 | | |
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 29A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 62mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 170mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 170mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 170mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 13A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 170mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters | Fuji 富士通 | | ||
Silicon N-Channel MOS FET
| RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET
| RENESAS 瑞萨 | | ||
功率MOSFET 100V-300V | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：103.83 Kbytes Page：4 Pages | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：103.83 Kbytes Page：4 Pages | Fuji 富士通 | | ||
N-Channel 200 V (D-S) MOSFET 文件：1.02789 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 150V (D-S) MOSFET 文件：1.75019 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：108.66 Kbytes Page：4 Pages | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：108.66 Kbytes Page：4 Pages | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：111.83 Kbytes Page：4 Pages | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：262.15 Kbytes Page：4 Pages | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：262.15 Kbytes Page：4 Pages | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：262.15 Kbytes Page：4 Pages | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：262.15 Kbytes Page：4 Pages | Fuji 富士通 | | ||
N-CHANNEL SILICON POWER MOSFET 文件：112 Kbytes Page：4 Pages | Fuji 富士通 | |
2SK360产品属性
- 类型
描述
- 型号
2SK360
- 制造商
Fuji Electric
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
24+ |
NA/ |
3530 |
原装现货,当天可交货,原型号开票 |
|||
RENESAS |
24+ |
SOT23 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
FUJITSU/富士通 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
FAIRCHILD/仙童 |
25+ |
SOT-23 |
51848 |
百分百原装现货 实单必成 欢迎询价 |
|||
FUJITSU/富士通 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS/瑞萨 |
24+ |
SOT23-3 |
880000 |
明嘉莱只做原装正品现货 |
|||
FUJI/富士电机 |
08+P |
TO-263 |
599 |
||||
原装HITAC |
25+23+ |
SOT23 |
42218 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
MSV/萌盛微 |
24+ |
SOT-23 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
2SK360芯片相关品牌
2SK360规格书下载地址
2SK360参数引脚图相关
- 500t
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2SK3641
- 2SK3640
- 2SK364
- 2SK3639
- 2SK3638
- 2SK3637
- 2SK3636
- 2SK3635
- 2SK3634-AZ
- 2SK3634
- 2SK3633(F)
- 2SK3633
- 2SK363
- 2SK362-Y(F)
- 2SK362-GR(F)
- 2SK362-BL(F)
- 2SK3628
- 2SK3625(Q)
- 2SK3625
- 2SK362
- 2SK3618
- 2SK3617-TL-E
- 2SK3617
- 2SK3615-TL-E
- 2SK3615
- 2SK3614-TD-E
- 2SK3614
- 2SK3611-01MRSC
- 2SK3611
- 2SK3610-01SC
- 2SK360IGETL
- 2SK3608-01LSC
- 2SK3608
- 2SK3607-01MRSC-P
- 2SK3607
- 2SK3606-01SC
- 2SK3606-01
- 2SK3604-01LSC
- 2SK3603-01MRSC
- 2SK3599-01MRSC-P
- 2SK3598-01SC
- 2SK3597
- 2SK3595-01MRSC
- 2SK3594-01SC
- 2SK3594-01
- 2SK3592-01LSC
- 2SK3591-01MRSC
- 2SK3591
- 2SK3590-01SC
- 2SK3590-01
- 2SK359
- 2SK3589
- 2SK3587-01MRSC-P
- 2SK3586-01SC
- 2SK3586-01
- 2SK3586
- 2SK3580-01MRSC-P
- 2SK358
- 2SK3577-T1B-A
- 2SK3577
- 2SK3576-T1B-AT
- 2SK3576-T1B-A
- 2SK3576-T1B
- 2SK3576
- 2SK3575
- 2SK3574
- 2SK3573
- 2SK3572-ZK-E1
- 2SK3572
- 2SK3571
- 2SK3570-ZK-E1
- 2SK3570
- 2SK357
- 2SK3569
- 2SK3568
- 2SK3567
- 2SK3566
- 2SK3565
2SK360数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SX1-T
2SX1-T，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-102SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
