N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SK3576 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5V drive

丝印代码：XK；MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3576 is a switching device which can be driven directly by a 2.5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swi

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SK3576 is a switching device which can be driven directly by a 2. 5 V power source. The device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power s • 2.5V drive available\n• Low on-state resistance RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) RDS(on)3 = 75 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A);

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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