SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

MOS Field Effect Transistor

Features ● 4.5V drive available. ● Low on-state resistance, RDS(on)1 = 4.0mΩ MAX. (VGS = 10 V, ID = 42A) ● Low gate charge QG = 68nC TYP. (VDD = 16 V, VGS = 10 V, ID = 83 A) ● Built-in gate protection diode ● Surface mount device available

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state