型号 功能描述 生产厂家 企业 LOGO 操作

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency     PG = 18 dB, Pout = 1.6 W, ηadd = 58 min. (f = 836 MHz) • Compact package capable of surface mounting

RENESAS

瑞萨

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency     PG = 18 dB, Pout = 1.6 W, ηadd = 58 min. (f = 836 MHz) • Compact package capable of surface mounting

RENESAS

瑞萨

Silicon N-Channel MOS FET UHF Power Amplifier

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RENESAS

瑞萨

更新时间:2026-1-1 23:01:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
24+
NA/
8250
原装现货,当天可交货,原型号开票
RENESAS/瑞萨
22+
SOT89
100000
代理渠道/只做原装/可含税
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
ROHM
24+
SOT523
999999
TOSHIBA/东芝
24+
TO263
21574
郑重承诺只做原装进口现货
ROHM/罗姆
24+
SOT-523
9600
原装现货,优势供应,支持实单!
TOSHIBA/东芝
2447
TO263
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ROHM
22+
323
20000
公司只有原装 品质保证
TOSHIBA(东芝)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ROHM
1922+
SOT-523
35689
原装进口现货库存专业工厂研究所配单供货

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