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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3390IXTB-E | Silicon N-Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60 min. (f = 836 MHz) • Compact package capable of surface mounting | RENESAS 瑞萨 |   | |
Silicon N Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 min. (f = 836 MHz) • Compact package capable of surface mounting | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N-Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60 min. (f = 836 MHz) • Compact package capable of surface mounting | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
23+ |
RP8P |
15210 |
全新原装正品现货,支持订货 |
|||
RENESAS |
2511 |
RP8P |
15210 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ROHM/罗姆 |
23+ |
SOT-523 |
50000 |
原装正品 支持实单 |
|||
HITACHI/日立 |
23+ |
sot-89 |
10000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
25+ |
RP8P |
880000 |
明嘉莱只做原装正品现货 |
|||
ROHM |
1922+ |
SOT-523 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
RENESAS/瑞萨 |
23+ |
RP8P |
50000 |
全新原装正品现货,支持订货 |
|||
ROHM |
24+ |
SOT523 |
999999 |
||||
ROHM |
23+ |
SOT-323 |
191500 |
原厂原装正品 |
2SK3390IXTB-E芯片相关品牌
2SK3390IXTB-E规格书下载地址
2SK3390IXTB-E参数引脚图相关
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2SK3390IXTB-E数据表相关新闻
2SMPP-02
优势渠道
2023-2-162SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK508G-K51-AE3-R
属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
2020-11-122SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK3591-01R
2SK3591-01R，全新原装当天发货或门市自取0755-82732291.
2020-3-28
DdatasheetPDF页码索引
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