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位置：首页 > IC中文资料第1480页 > 2SK337

2SK337价格

参考价格：￥0.7800

型号：2SK337209L 品牌：Panasonic 备注：这里有2SK337多少钱，2025年最近7天走势，今日出价，今日竞价，2SK337批发/采购报价，2SK337行情走势销售排行榜，2SK337报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK3371

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications Features • Low drain-source ON-resistance: RDS (ON) = 6.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 0.85 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

2SK3371

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3372

Silicon N-Channel Junction

For impedance conversion in low frequency For electret capacitor microphone ■ Features • High mutual conductance gm • Low noise voltage of NV

Panasonic

松下

2SK3373

Switching Regulator and DC-DC Converter Applications

Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 2.9 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.7 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement model: Vth = 2.0 to 4.0

TOSHIBA

东芝

2SK3373

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3374

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SK3374

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV)

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 3.7 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.7 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

2SK3376MFV

Silicon N Channel Junction Type For ECM

For ECM • Application for Ultra-compact ECM

TOSHIBA

东芝

2SK3376TK

Silicon N Channel Junction Type For ECM

For ECM • Application for Ultra-compact ECM

TOSHIBA

东芝

2SK3376TV

Silicon N Channel Junction Type For ECM

For ECM • Application for Ultra-compact ECM

TOSHIBA

东芝

2SK3377

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 760 pF TY

NEC

瑞萨

2SK3377

MOS Field Effect Transistor

Features • Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 m MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 760 pF TYP. • Built-in gate protection diode

KEXIN

科信电子

2SK3377

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

RENESAS

瑞萨

2SK3377-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ci

RENESAS

瑞萨

2SK3377-Z

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-state Resistance RDS(on)1 = 44 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 78 mΩ MAX. (VGS = 4.0 V, ID = 10 A) • Low Ciss : Ciss = 760 pF TY

NEC

瑞萨

2SK3378

Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS=2.7Ω typ. (VGS= 10 V , ID= 50 mA) RDS= 4.7Ω typ. (VGS= 4 V , ID= 20 mA) • 4 V gate drive device. • Small package (CMPAK)

HitachiHitachi Semiconductor

日立日立公司

2SK3378

Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS= 2.7Ω typ. (VGS= 10 V, ID= 50 mA) RDS= 4.7Ω typ. (VGS= 4 V, ID= 20 mA) • 4 V gate drive device. • Small package (CMPAK)

RENESAS

瑞萨

2SK3378ENTL-E

Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS= 2.7Ω typ. (VGS= 10 V, ID= 50 mA) RDS= 4.7Ω typ. (VGS= 4 V, ID= 20 mA) • 4 V gate drive device. • Small package (CMPAK)

RENESAS

瑞萨

2SK3378ENTR-E

Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS= 2.7Ω typ. (VGS= 10 V, ID= 50 mA) RDS= 4.7Ω typ. (VGS= 4 V, ID= 20 mA) • 4 V gate drive device. • Small package (CMPAK)

RENESAS

瑞萨

2SK3371

N-Channel 650 V (D-S) MOSFET

文件：1.08589 Mbytes Page：9 Pages

VBSEMI

微碧半导体

2SK3371

Switching Regulator Applications

文件：179.89 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3371_10

Switching Regulator Applications

文件：179.89 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3372

Silicon N-Channel Junction FETs (Small Signal)

Panasonic

松下

2SK33720SL

封装/外壳：SOT-723 包装：散装 描述：JFET N-CH 2MA 100MW SSSMINI-3P 分立半导体产品 晶体管 - JFET

Panasonic

松下

2SK33720TL

封装/外壳：SOT-723 包装：散装 描述：JFET N-CH 2MA 100MW SSSMINI-3P 分立半导体产品 晶体管 - JFET

Panasonic

松下

2SK3372G

Silicon N-Channel Junction FET

Panasonic

松下

2SK3373

Power MOSFET (N-ch 250V VDSS 500V)

TOSHIBA

东芝

2SK3373

Switching Regulator and DC-DC Converter Applications Motor Drive Applications

文件：204.75 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3373

Silicon N-Channel MOS Type Switching Regulator and DC/DC Converter Applications Motor Drive Applications

文件：177.12 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3373

Power MOSFET

文件：1.07631 Mbytes Page：9 Pages

VBSEMI

微碧半导体

2SK3373

isc N-Channel MOSFET Transistor

文件：330.13 Kbytes Page：2 Pages

ISC

无锡固电

2SK3373_06

Silicon N-Channel MOS Type Switching Regulator and DC/DC Converter Applications Motor Drive Applications

文件：177.12 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3373_10

Switching Regulator and DC-DC Converter Applications Motor Drive Applications

文件：204.75 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3374

Silicon N Channel MOS Type Switching Regulator Applications

文件：187.68 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3374

Switching Regulator Applications

文件：188.81 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3374_06

Silicon N Channel MOS Type Switching Regulator Applications

文件：187.68 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3374_10

Switching Regulator Applications

文件：188.81 Kbytes Page：6 Pages

TOSHIBA

东芝

2SK3377

N-Channel 60 V (D-S) MOSFET

文件：960.08 Kbytes Page：7 Pages

VBSEMI

微碧半导体

2SK3377

isc N-Channel MOSFET Transistor

文件：398.77 Kbytes Page：2 Pages

ISC

无锡固电

2SK3377

Low on-resistance

文件：130.15 Kbytes Page：1 Pages

TYSEMI

台湾TY半导体

2SK3377_15

SWITCHING P-CHANNEL POWER MOS FET

文件：271.83 Kbytes Page：10 Pages

RENESAS

瑞萨

2SK3377-Z

isc N-Channel MOSFET Transistor

文件：331.22 Kbytes Page：2 Pages

ISC

无锡固电

2SK3377-Z

N-Channel MOSFET uses advanced trench technology

文件：2.38017 Mbytes Page：5 Pages

DOINGTER

杜因特

2SK3377-Z-E1-AZ

N-Channel 60-V (D-S) MOSFET

文件：896.93 Kbytes Page：6 Pages

VBSEMI

微碧半导体

2SK3377-Z-E2

N-Channel 60-V (D-S) MOSFET

文件：896.91 Kbytes Page：6 Pages

VBSEMI

微碧半导体

2SK3377-ZK

isc N-Channel MOSFET Transistor

文件：401.34 Kbytes Page：2 Pages

ISC

无锡固电

2SK337产品属性

  • 类型

    描述

  • 型号

    2SK337

  • 制造商

    Toshiba

  • 功能描述

    Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) PW-Mold

  • 制造商

    Toshiba

  • 功能描述

    Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) PW-Mold Bulk

2SK337供应商更多...

更新时间：2025-12-25 11:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
贸泽芯城（深圳）电子科技有限公司
2SK3377-ZK-E1
NEC
23+
TO-252
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市得捷芯城科技有限公司
2SK3377-Z-E2-AZ
Renesas(瑞萨)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
洪芯国际半导体（深圳）有限公司
2SK3377-Z
NEC
25+
ZIP
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
询价
中天科工半导体（深圳）有限公司
2SK3377-ZK
NEC
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
询价
深圳市美思瑞电子科技有限公司
2SK3377-Z-E1
NEC
22+
TO252
12245
现货,原厂原装假一罚十!
询价
深圳市宇创芯科技有限公司
2SK3377-Z-E2-AZ
RENESAS/瑞萨
24+
SC70-6
9600
原装现货,优势供应,支持实单!
询价
深圳市纳艾斯科技有限公司
2SK3377-Z-E2-AZ
RENESAS
24+
TO-252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市勤思达科技有限公司
2SK3377
NEC
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
询价
深圳市坤融电子科技有限公司
2SK3377-Z-E2-A
RENESAS/瑞萨
2025+
TO252
5000
原装进口价格优 请找坤融电子!
询价
深圳市凌旭科技有限公司
2SK3377-Z-E1-AZ
RENESAS
2016+
TO252
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价

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