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Silicon N Channel MOS FET High Speed Switching

Features • Low on-resistance RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Switching

Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS= 1.6 Ωtyp. (VGS= 4 V , ID= 50 mA) RDS= 2.2 Ωtyp. (VGS= 2.5 V , ID= 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)

RENESAS

瑞萨

更新时间:2025-12-29 20:46:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS/瑞萨
25+
原装
32000
RENESAS/瑞萨全新特价2SK3348CNTL-E即刻询购立享优惠#长期有货
RENESAS/瑞萨
24+
NA/
36000
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS/瑞萨
10+
323
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
23+
SOT-23
50000
原装正品 支持实单
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
RENESAS/瑞萨
25+
SMD
880000
明嘉莱只做原装正品现货
RENESAS
26+
SOT323
360000
进口原装现货
RENESAS
25+23+
SOT323
59321
绝对原装正品现货,全新深圳原装进口现货
HITACHI/日立
2450+
SOT323
6540
只做原装正品现货或订货!终端客户免费申请样品!

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