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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK3296-ZK | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance | NEC 瑞萨 |   | |
2SK3296-ZK | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F | RENESAS 瑞萨 | | |
MOS Field Effect Transistor Features ● 4.5 V drive available ● Low on-state resistance RDS(on)1 = 12mΩ MAX. (VGS = 10 V, ID = 18 A) ● Low gate charge QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V) ● Built-in gate protection diode ● Surface mount device available | KEXIN 科信电子 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • 4.5 V drive available • Low on-state resistance | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3296 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. F | RENESAS 瑞萨 | |
2SK3296-ZK产品属性
- 类型
描述
- 型号
2SK3296-ZK
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
4040 |
原装现货,当天可交货,原型号开票 |
|||
NEC |
25+23+ |
TO263 |
73589 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
NEC |
24+ |
SOT-263 |
18 |
||||
NEC |
25+ |
TO-263 |
860000 |
明嘉莱只做原装正品现货 |
|||
NEC |
23+ |
SOT263 |
7000 |
||||
NEC |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
NEC |
11+ |
SOT263 |
1600 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
2022+ |
SOT263 |
18000 |
原厂代理 终端免费提供样品 |
|||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
2023+ |
TO-263 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
2SK3296-ZK芯片相关品牌
2SK3296-ZK规格书下载地址
2SK3296-ZK参数引脚图相关
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- 5000
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2SK3296-ZK数据表相关新闻
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属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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