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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (MPAK) | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (MPAK) | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
1500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS(瑞萨)/IDT |
24+ |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
||||
RENESAS/瑞萨 |
23+ |
SOT-23 |
50000 |
原装正品 支持实单 |
|||
RENESAS/瑞萨 |
2450+ |
3-MPAK |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
RENESAS/瑞萨 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
HIT |
24+ |
SOT-23 |
20000 |
||||
RENESAS |
20+ |
SOT23 |
49000 |
原装优势主营型号-可开原型号增税票 |
|||
RENESAS/瑞萨 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS/瑞萨 |
22+ |
SOT-23 |
20000 |
只做原装 |
|||
HITACHI |
2023+ |
SOT-23 |
50000 |
原装现货 |
2SK3288ENTL-E芯片相关品牌
2SK3288ENTL-E规格书下载地址
2SK3288ENTL-E参数引脚图相关
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属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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DdatasheetPDF页码索引
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