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2SK316价格
参考价格：￥0.7150
型号：2SK316-Q 品牌：Panasonic 备注：这里有2SK316多少钱，2025年最近7天走势，今日出价，今日竞价，2SK316批发/采购报价，2SK316行情走势销售排行榜，2SK316报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK316 | SI N CHANNEL JUCTION 2SK247 Si N-Channel Junction 1Page Wide-Band,Low-Noise Amplifier 2SK301 Si N-Channel Junction 3Page AF Amplifier, Switching 2SK316 Si N-Channel Junction 5Page Vide Camera First Stage Amplifier | Panasonic 松下 |   | |
2SK316 | SI N CHANNEL JUCTION | Panasonic 松下 | | |
Silicon N Channel MOS FET High Speed Power Switching Features 1. Low on-resistance RDS= 130 mΩtyp. 2. High speed switching 3. 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =130 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.01255 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
isc N-Channel MOSFET Transistor 文件：324.73 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：108.27 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：114.79 Kbytes Page：11 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：327.04 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：400.9 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：324.51 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：108.13 Kbytes Page：10 Pages | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：335.61 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N Channel MOS FET High Speed Power Switching 文件：108.73 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
2SK316产品属性
- 类型
描述
- 型号
2SK316
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASONIC |
23+24 |
SOT23 |
28950 |
专营原装正品SMD二三极管,电源IC |
|||
RENESAS |
25+ |
TO-3P |
350 |
原厂原装,价格优势 |
|||
PANASONIC |
24+ |
SOT-23 |
5000 |
只做原装公司现货 |
|||
PANASONIC/松下 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
PANASONIC |
18+ |
SOT-23 |
85600 |
保证进口原装可开17%增值税发票 |
|||
HITACHI |
专业铁帽 |
TO-220 |
500 |
原装铁帽专营,代理渠道量大可订货 |
|||
HITACHI/日立 |
17+ |
220 |
31518 |
原装正品 可含税交易 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
7948 |
支持大陆交货,美金交易。原装现货库存。 |
|||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
国产 |
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2SK316规格书下载地址
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2SK316数据表相关新闻
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2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
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属性 参数值 商品目录 结型场效应晶体管（JFET） 连续漏极电流（Id）（25°C 时） 50mA 漏源电压（Vdss） 15V 类型 N 沟道 最大功率耗散（Ta=25°C） 200mW
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2020-3-28
DdatasheetPDF页码索引
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