位置：首页 > IC中文资料第5948页 > 2SK308
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK308 | isc N-Channel MOSFET Transistor 文件：343.25 Kbytes Page：2 Pages | ISC 无锡固电 |   | |
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source | RENESAS 瑞萨 | | ||
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Chopper Regulator DC−DC Converter, and Motor Drive Applications • 4 V gate drive • Low drain−source ON resistance : RDS (ON) = 40 mΩ (typ.) • High forward transfer admittance : |Yfs| = 27 S (typ.) • Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) • Enhancement−mode : Vth = 0.8~2.0 V ( | TOSHIBA 东芝 | | ||
Chopper Regulator, DC-DC Converter and Motor Drive Applications Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 3 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m | TOSHIBA 东芝 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Chopper Regulator DC−DC Converter, and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 20 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 30 V) ● Enhancement mode : Vth = 1.5 to 3.0 V (VDS = 10 V, ID = | TOSHIBA 东芝 | | ||
isc N-Channel MOSFET Transistor 文件：333.59 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：333.71 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Silicon N Channel MOS FET High Speed Power Switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：327.5 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：401.37 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Power MOSFETs | RENESAS 瑞萨 | | ||
isc N-Channel MOSFET Transistor 文件：333.43 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.0867 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
Chopper Regulator, DC-DC Converter and Motor Drive 文件：170.65 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Silicon N Channel MOS Type 文件：177.29 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Silicon N Channel MOS Type 文件：177.29 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Chopper Regulator, DC-DC Converter and Motor Drive 文件：170.65 Kbytes Page：6 Pages | TOSHIBA 东芝 | | ||
Chopper Regulator DC?묭C Converter, and Motor Drive 文件：164.79 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter, and Motor Drive Applications 文件：191.93 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
Silicon N Channel MOS Type Chopper Regulator DC−DC Converter, and Motor Drive Applications 文件：191.93 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
Chopper Regulator DC?묭C Converter, and Motor Drive 文件：164.79 Kbytes Page：3 Pages | TOSHIBA 东芝 | | ||
isc N-Channel MOSFET Transistor 文件：401.51 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：327.65 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK308产品属性
- 类型
描述
- 型号
2SK308
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel MOS FET High Speed Power Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
24+ |
TO-251 |
16900 |
原装正品现货支持实单 |
|||
TOSHIBA |
2023+ |
TO-263 |
50000 |
原装现货 |
|||
VBsemi |
24+ |
TO220F |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
26+ |
TO-251 |
360000 |
进口原装现货 |
|||
2SK3082STL |
25+ |
916 |
916 |
||||
24+ |
2000 |
||||||
Renesas |
24+ |
TO-252 |
5000 |
全现原装公司现货 |
|||
Toshiba |
25+23+ |
252 |
34787 |
绝对原装正品全新进口深圳现货 |
|||
东芝 |
23+24 |
TO-220 |
59630 |
主营原装MOS,二三级管,肖特基,功率场效应管 |
|||
TOSHIBA/东芝 |
24+ |
TO263 |
21574 |
郑重承诺只做原装进口现货 |
2SK308规格书下载地址
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2SK308数据表相关新闻
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2023-2-272SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3484-Z-E1-AZ Manufacturer Part Number: 2SK3484-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Not Recommended Ihs Manufacturer: RENESAS ELECTRONICS CORP Part Package
2021-6-242SK3105-T1B-A找代理商上深圳百域芯科技
2SK3105-T1B-A找代理商上深圳百域芯科技 芯片详细信息 Source Content uid: 2SK3105-T1B-A Manufacturer Part Number: 2SK3105-T1B-A Brand_Name: Renesas Pbfree Code: Yes Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP P
2021-6-242SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技 芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
2021-6-242SK3313
2SK3313，全新原装当天发货或门市自取0755-82732291.
2020-3-282SK2698
2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
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