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2SK308

isc N-Channel MOSFET Transistor

文件:343.25 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 10 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 0.055 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator DC−DC Converter, and Motor Drive Applications • 4 V gate drive • Low drain−source ON resistance : RDS (ON) = 40 mΩ (typ.) • High forward transfer admittance : |Yfs| = 27 S (typ.) • Low leakage current : IDSS = 100 µA (max) (VDS = 100 V) • Enhancement−mode : Vth = 0.8~2.0 V (

TOSHIBA

东芝

Chopper Regulator, DC-DC Converter and Motor Drive Applications

Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.7 Ω (typ.) • High forward transfer admittance: |Yfs| = 3 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 600 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator DC−DC Converter, and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 20 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 30 V) ● Enhancement mode : Vth = 1.5 to 3.0 V (VDS = 10 V, ID =

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:333.59 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:333.71 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS FET High Speed Power Switching

HITACHIHitachi Semiconductor

日立日立公司

Power MOSFETs

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:327.5 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:401.37 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

N-Channel 650 V (D-S) MOSFET

文件:1.0867 Mbytes Page:9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:333.43 Kbytes Page:2 Pages

ISC

无锡固电

Chopper Regulator, DC-DC Converter and Motor Drive

文件:170.65 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type

文件:177.29 Kbytes Page:6 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type

文件:177.29 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator, DC-DC Converter and Motor Drive

文件:170.65 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator DC?묭C Converter, and Motor Drive

文件:164.79 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter, and Motor Drive Applications

文件:191.93 Kbytes Page:3 Pages

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator DC−DC Converter, and Motor Drive Applications

文件:191.93 Kbytes Page:3 Pages

TOSHIBA

东芝

Chopper Regulator DC?묭C Converter, and Motor Drive

文件:164.79 Kbytes Page:3 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:401.51 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:327.65 Kbytes Page:2 Pages

ISC

无锡固电

2SK308产品属性

  • 类型

    描述

  • 封装类型:

    LDPAK(L)/TO-262

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • VDSS (V) 最大值:

    60

  • ID (A):

    10

  • RDS (ON)(mΩ) 最大值@4V或4.5V:

    150

  • RDS (ON)(mΩ) 最大值@10V或8V:

    75

  • Ciss (pF) 典型值:

    350

  • Vgs (off) (V) 最大值:

    2.5

  • VGSS (V):

    20

  • Pch (W):

    30

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

更新时间:2026-7-24 16:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
东芝
26+
TO-220
59630
主营原装MOS 二三级管 肖特基 功率场效应管
Toshiba
25+23+
252
34787
绝对原装正品全新进口深圳现货
IR
26+
TO220
18689
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
RENESAS
26+
TO-251
360000
进口原装现货
2SK3082STL
25+
916
916
TOSHIBA/东芝
2025+
TO263
5000
原装进口价格优 请找坤融电子!
VBsemi
25+
TO220F
9000
只做原装正品 有挂有货 假一赔十
TOSHIBA
1323+
SOT-263
226
全新 发货1-2天
TOSHIBA/东芝
24+
TO263
21574
郑重承诺只做原装进口现货
24+
2000

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