SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A) • Low Ciss : Ciss = 2100 pF

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on)= 6 mΩtyp. • Low drive current • 4 V gate drive device can be driven from 5 V source

Silicon N-Channel Power F-MOS FET

■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply

Low-Frequency Amp Applications?

Low-Frequency Amplifier Applications Features • Ideal for potentiometers, analog switches, low frequency amplifiers, and constant-current regulators.

N CHANNEL MOS TYPE (FM TUNER, VHF RF AMPLIFIER APPLICATIONS)

FM Tuner, VHF RF Amplifier Applications Low reverse transfer capacitance: Crss= 0.035 pF (typ.) Low noise figure: NF = 1.7dB (typ.) High power gain: Gps= 28dB (typ.) Recommend operation voltage: 5~15 V