2SK295价格

参考价格:¥0.9750

型号:2SK2951 品牌:SANYO 备注:这里有2SK295多少钱,2025年最近7天走势,今日出价,今日竞价,2SK295批发/采购报价,2SK295行情走势销售排行榜,2SK295报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK295

SILICON N CHANNEL MOSFET HIGH SPEED POWER SWITCHING

SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING

HitachiHitachi Semiconductor

日立日立公司

2SK295

isc N-Channel MOSFET Transistor

文件:332.82 Kbytes Page:2 Pages

ISC

无锡固电

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching.

SANYO

三洋

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR APPLICATIONS)

Chopper Regulator Applications ● Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) ● High forward transfer admittance : |Yfs| = 8.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 400 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTERAND AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS(ON) = 0.31 Ω(typ.) ● High forward transfer admittance : |Yfs| = 15 S (typ.) ● Low leakage current : IDSS= 100 μA (max) (VDS= 600 V) ● Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID=

TOSHIBA

东芝

Power MOSFET

1. Scope This specifies Fuji Power MOSFET 2SK2954-MR 2. Construction N-channel enhancement mode power MOSFET 3. Application for switching 4. Outview TO-220F Outview See to 4/10 page

Fuji

富士通

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.010 Ωtyp. • High speed switching • 4V gate drive device can be driven from 5V source

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.010 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS=0.010 Ωtyp. • High speed switching • 4 V gate drive device can be driven from 5 V source

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 7 mΩtyp. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 7mOhm typ. • 4V gate drive devices. • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

• Low on-resistance RDS(on)= 7 mΩtyp. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

· Low on-resistance RDS(on)= 7mW typ. · 4V gate drive devices. · High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

· Low on-resistance RDS(on)= 7mW typ. · 4V gate drive devices. · High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

· Low on-resistance RDS(on)= 7mW typ. · 4V gate drive devices. · High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

· Low on-resistance RDS(on)= 7mW typ. · 4V gate drive devices. · High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

· Low on-resistance RDS(on)= 7mW typ. · 4V gate drive devices. · High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

· Low on-resistance RDS(on)= 7mW typ. · 4V gate drive devices. · High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.5 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.5 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.5mΩ typ. • 4V gate drive devices. • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 5.5 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7mΩ typ. • 4V gate drive devices. • High speed switching

HitachiHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

Silicon N Channel MOS FET High Speed Power Switching

Features • Low on-resistance RDS(on) = 7 mΩ typ. • 4 V gate drive devices. • High speed switching

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件:296.19 Kbytes Page:2 Pages

ISC

无锡固电

Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator Applications

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?−MOSV)Chopper Regulator Applications

文件:423.16 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:437.5 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:318.7 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:741.29 Kbytes Page:6 Pages

TOSHIBA

东芝

Power MOSFET (N-ch 500V VDSS 700V)

TOSHIBA

东芝

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:741.29 Kbytes Page:6 Pages

TOSHIBA

东芝

Chopper Regulator, DC−DC Converter and Motor Drive Applications

文件:437.5 Kbytes Page:6 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

文件:322.96 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFET

Fuji

富士通

isc N-Channel MOSFET Transistor

文件:330.31 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:323.81 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件:1.5636 Mbytes Page:7 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

文件:959.95 Kbytes Page:8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:327.08 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:400.94 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 30-V (D-S) MOSFET

文件:1.68339 Mbytes Page:7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

文件:326.79 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:400.66 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:332.9 Kbytes Page:2 Pages

ISC

无锡固电

2SK295产品属性

  • 类型

    描述

  • 型号

    2SK295

  • 制造商

    SANYO Semiconductor Co Ltd

  • 功能描述

    MOSFETN CH200V1ASOT89

更新时间:2025-12-24 23:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
24+
TO-3PF
27500
原装正品,价格最低!
HITACHI
24+
NA/
3359
原装现货,当天可交货,原型号开票
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
TOSH
23+
TO220/3
20000
全新原装假一赔十
SANYO/三洋
25+
SOT-89
32000
SANYO/三洋全新特价2SK2951即刻询购立享优惠#长期有货
HITACHI/日立
24+
TO 262 263
158370
明嘉莱只做原装正品现货
TOSHIBA
24+/25+
32
原装正品现货库存价优
TOSHIBA
24+
TO-3P(N)IS
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
RENESAS/瑞萨
新年份
TO-220
65890
一级代理原装正品现货,支持实单!
RENESAS
25+
TO-3P
6500
十七年专营原装现货一手货源,样品免费送

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