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2SK26价格

参考价格：￥1.3128

型号：2SK2615(TE12L,F) 品牌：TOS 备注：这里有2SK26多少钱，2025年最近7天走势，今日出价，今日竞价，2SK26批发/采购报价，2SK26行情走势销售排行榜，2SK26报价。

型号	功能描述	生产厂家企业	LOGO
2SK2601	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2601	Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance : \|Yfs\| = 7.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID =	TOSHIBA 东芝	TOSHIBA
2SK2601	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2601_06	Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance : \|Yfs\| = 7.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID =	TOSHIBA 东芝	TOSHIBA
2SK2602	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS) Switching Regulator Applications ● Low drain−source ON-resistance : RDS (ON) = 0.9 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK2602	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2603	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2603	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 2.6 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS	TOSHIBA 东芝	TOSHIBA
2SK2604	N CHANNEL MOS TYPE (HGIH SPEED, HIGH VOLTAGE SWITCHIN, SWITCHING REGULATOR APPLICATIONS) Switching Regulator Applications 1. Low drain−source ON resistance : RDS (ON)= 1.9 Ω(typ.) 2. High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) 3. Low leakage current : IDSS= 100 μA (max) (VDS= 640 V) 4. Enhancement mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)	TOSHIBA 东芝	TOSHIBA
2SK2606	N CHANNEL MOS TYPE (DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) DC−DC Converter, Relay Drive and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) ● High forward transfer admittance : \|Yfs\|= 7.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 640 V) ● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA	TOSHIBA 东芝	TOSHIBA
2SK2606	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2607	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2608	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2611	DC?묭C Converter, Relay Drive and Motor Drive DC−DC Converter, Relay Drive and Motor Drive Applications 1. Low drain−source ON-resistance : RDS (ON)= 1.2 Ω(typ.) 2. High forward transfer admittance : \|Yfs\| =7.0 S (typ.) 3. Low leakage current : IDSS= 100 μA (max) (VDS= 720 V) 4. Enhancement−mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID	TOSHIBA 东芝	TOSHIBA
2SK2611T	DC?묭C Converter, Relay Drive and Motor Drive DC−DC Converter, Relay Drive and Motor Drive Applications 1. Low drain−source ON-resistance : RDS (ON)= 1.2 Ω(typ.) 2. High forward transfer admittance : \|Yfs\| =7.0 S (typ.) 3. Low leakage current : IDSS= 100 μA (max) (VDS= 720 V) 4. Enhancement−mode : Vth= 2.0 to 4.0 V (VDS= 10 V, ID	TOSHIBA 东芝	TOSHIBA
2SK2613	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2613	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 1.4 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 6.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 800 V) • Enhancement-model: Vth = 2.0 to 4.0 V (VD	TOSHIBA 东芝	TOSHIBA
2SK2614	N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) Chopper Regulator, DC-DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain-source ON-resistance : RDS (ON) = 0.032 Ω (typ.) ● High forward transfer admittance : \|Yfs\| = 13 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 50 V) ● Enhancement mode : Vth = 0.8 to 2.0	TOSHIBA 东芝	TOSHIBA
2SK2614	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2615	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SK2616	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg.	SANYO 三洋	SANYO
2SK2616L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2616S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =4.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2617ALS	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching.	SANYO 三洋	SANYO
2SK2617LS	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2618ALS	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching. • Micaless package facilitating mounting.	SANYO 三洋	SANYO
2SK2618LS	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2618LS	N- Channel MOS Silicon FET Very High-Speed Switching Applications Very High-Speed Switching Applications Features and Applications • Low ON-state resistance. • Low Qg	SANYO 三洋	SANYO
2SK2619	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.25Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2623	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg.	SANYO 三洋	SANYO
2SK2623L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =5.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2623S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) =5.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2624ALS	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching.	SANYO 三洋	SANYO
2SK2624LS	Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg.	SANYO 三洋	SANYO
2SK2624LS	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2625	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Low Qg.	SANYO 三洋	SANYO
2SK2625ALS	N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Low Qg. • Ultrahigh-speed switching.	SANYO 三洋	SANYO
2SK2625LS	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Low Qg.	SANYO 三洋	SANYO
2SK2625LS	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2627	Ultrahigh-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg.	SANYO 三洋	SANYO
2SK2628LS	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2631	Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Smaller amount of total gate charge.	SANYO 三洋	SANYO
2SK2631L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 10Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2631S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 10Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2632LS	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 800V(Min) · Static Drain-Source On-Resistance -RDS(on) = 4.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2632LS	擁낂쳵?잆궧?ㅳ긿?곥꺍?곁뵪 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Low Qg.	SANYO 三洋	SANYO
2SK2638	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.65Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2638-01MR	N-channel MOS-FET 450V 0,65Ω 10A 50W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - Gene	Fuji 富士通	Fuji
2SK2639	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.65Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2639-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2640	N-channel MOS-FET Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifie	Fuji 富士通	Fuji
2SK2640	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2640-01MR	N-channel MOS-FET Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifie	Fuji 富士通	Fuji
2SK2641-01	N-channel MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters	Fuji 富士通	Fuji
2SK2642	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2642-01MR	N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier	Fuji 富士通	Fuji
2SK2643	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2643-01	N-channel MOS-FET 500V 0,55Ω 15A 125W >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Repetitive Avalanche Rated >Applications - Switching Regulators - UPS - DC-DC converters - Ge	Fuji 富士通	Fuji
2SK2644	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2644-01	N-CHANNEL SILICON POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±35V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpos	Fuji 富士通	Fuji

2SK26产品属性

类型
描述
型号
2SK26
功能描述
MOSFET N-CH 500V 10A TO-3PN
RoHS
否
类别
分离式半导体产品 >> FET - 单
系列
-
标准包装
1,000
系列
MESH OVERLAY™ FET
型
MOSFET N 通道，金属氧化物 FET
特点
逻辑电平门
漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
C
18A 开态Rds（最大）@ Id, Vgs @ 25°
C
180 毫欧 @ 9A，10V Id 时的
Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
Vgs
72nC @ 10V 输入电容(Ciss) @
Vds
1560pF @ 25V 功率 -
最大
40W
安装类型
通孔
封装/外壳
TO-220-3 整包
供应商设备封装
TO-220FP
包装
管件

2SK26供应商更多...

更新时间：2025-12-24 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK2603	TOSHIBA/东芝	24+	NA/	3958	原装现货,当天可交货,原型号开票	询价
中天科工半导体（深圳）有限公司	2SK2604	TOSHIBA/东芝	20+	TO-3P	38900	原装优势主营型号-可开原型号增税票	询价
深圳市联世界科技有限公司	2SK2604	TOSHIBA	24+/25+		49	原装正品现货库存价优	询价
深圳市豪迈兴电子有限公司	2SK2603	TOSHIBA	24+	TO-220AB	4326	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市昌和盛利电子有限公司	2SK2603	TOSHIBA	NEW	TO-220	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市振宏微科技有限公司	2SK2604	TOS	23+	TO-3P	5000	专做原装正品,假一罚百!	询价
深圳市一线半导体有限公司	2SK2603		24+		60000		询价
上海磐岳电子有限公司	2SK2603	TOSHIBA	2023+	TO-220	58000	进口原装,现货热卖	询价
深圳市恒创达实业有限公司	2SK2605	TOS	17+	TO220F-3	6200		询价
深圳市能创芯电子科技有限公司	2SK2603	TOSHIBA	23+	TO-220	3600	原装正品假一罚百!可开增票!	询价

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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Source Content uid: 2SK2415-Z-E1-AZ Manufacturer Part Number: 2SK2415-Z-E1-AZ Brand_Name: Renesas Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: RENESAS ELECTRONICS CORP Package Descriptio
2021-6-24
2SK2698
2SK2698，全新原装当天发货或门市自取0755-82732291.
2019-11-14
2SK1985-01MR
2SK1985-01MR，全新原装当天发货或门市自取0755-82732291.
2019-10-30

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