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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK2601 | Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = | TOSHIBA 东芝 |   | |
2SK2601 | Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | |
2SK2601 | isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
2SK2601 | Power MOSFET (N-ch 250V VDSS 500V) | TOSHIBA 东芝 | | |
2SK2601 | isc N-Channel MOSFET Transistor 文件：324.5 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2SK2601 | DC−DC Converter, Relay Drive and Motor Drive Applications 文件：425.91 Kbytes Page：6 Pages | TOSHIBA 东芝 | | |
2SK2601 | N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) 文件：288.27 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = | TOSHIBA 东芝 | | ||
DC−DC Converter, Relay Drive and Motor Drive Applications 文件：425.91 Kbytes Page：6 Pages | TOSHIBA 东芝 | |
2SK2601产品属性
- 类型
描述
- 型号
2SK2601
- 功能描述
MOSFET N-CH 500V 10A TO-3PN
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
24+ |
60000 |
|||||
TOSHIBA/东芝 |
24+ |
TO3P |
39197 |
郑重承诺只做原装进口现货 |
|||
TOS |
17+ |
TO-3P |
6200 |
||||
TOSHIBA |
23+ |
TO-3P |
5000 |
原装正品,假一罚十 |
|||
TOSHIBA |
2016+ |
TO3P |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
TOSHIBA/东芝 |
2447 |
TO-3P |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TOSHIBA(东芝) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
TOSHIBA/东芝 |
1922+ |
TO3P |
8900 |
公司原装现货特价长期供货欢迎来电咨询 |
|||
TOSHIBA |
24+/25+ |
1974 |
原装正品现货库存价优 |
||||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
2SK2601规格书下载地址
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