SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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MOS Field Effect Transistors

Features ● Low On-state Resistance:RDS(on)=7.5 max.(VGS=10V,ID=2.0A) ● Low Ciss Ciss=485pF TYP ● High Avalanche Capability Ratings

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2479 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on) = 7.5 W (VGS = 10 V, ID = 2.0 A) • Low Ciss Ciss = 485 pF TYP. • High Avalanche Cap

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 7.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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