SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on)1 = 70 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (VGS = 4 V, ID = 5.0 A) • Low Ciss: Ci

MOS Field Effect Transistor

Features Low On-Resistance RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A) RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A) Low Ciss Ciss = 840 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings

N-Channel 60 V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

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