N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND SWITCHING REGULATOR APPLICATIONS)

Chopper Regulator, DC−DC Converter and Switching Regulator Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 16 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) ● Enhancement mode : Vth = 0.8

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications​​​​​​​ ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 40 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) ● Enhancement mode : Vth = 0.8

Chopper Regulator, DC?묭C Converter and Motor Drive Applications

Chopper Regulator, DC−DC Converter and Motor Drive Applications​​​​​​​ ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 40 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) ● Enhancement mode : Vth = 0.8

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 8 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 60 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) ● Enhancement mode : Vth = 0.8 to 2.0 V

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current ID = 60A @ Tc=25℃ ·Drain Source Voltage VDSS = 60V(Min) ·Fast Switching Speed ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) ● High forward transfer admittance : |Yfs| = 16 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) ● Enhancement mode : Vth =

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Application High speed power switching

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Application High speed power switching

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source. • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Application High speed power switching

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive (2.5V drive).

Very High-Speed Switching Applications

N-Channel Silicon MOSFET Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive.

2SK2320

Field Effect Transistor Silicon N-Channel MOS Type

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance, High breakdown voltage • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, motor control Application High voltage / High speed power switching

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS) SHF BAND LOW NOISE AMPLIFIER APPLICATIONS

N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

SHF BAND LOW NOISE AMPLIFIER APPLICATIONS ● Low Noise Figure : NF = 0.65dB (f = 12GHz) ● High Gain : Ga = 11dB (f = 12GHz)

HVX-2 Series Power MOSFET(700V 6A)

Feature 1. Input capacitance ( Ciss ) is small. Especially, input capacitance at 0 biass is small. 2. The static Rds(on) is small. 3. The switching time is fast. 4. Avalache resistance guaranteed.

Silicon N-Channel Power F-MOS

Silicon N-Channel Power F-MOS FETs ■Features ● Avalanche energy capability guaranteed ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ■Applications ● Non-contact relay ● Solenoid drive ● Motor drive ● Control equipment ● Switching mode regula

Silicon N-Channel Power F-MOS FET

Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control e

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2341 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 0.26 W MAX. (VGS = 10 V, ID = 6.0 A) • LOW Ciss Ciss = 1090 pF TYP. •

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 11A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

High-Voltage, High-Speed Switching Applications

N-Channel Silicon MOSFET Features • Low ON resistance, ultrahigh-speed switching. • High reliability (Adoption of HVP process).

High-Voltage, High-Speed Switching Applications

Features 1. Low ON resistance, ultrahigh-speed switching. 2. High reliability (Adoption of HVP process).

High-Voltage, High-Speed Switching Applications

High-Voltage, High-Speed Switching Applications Features • Low ON resistance, ultrahigh-speed switching. • High reliability (Adoption of HVP process).

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Switching Regulator, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain−source ON-resistance : RDS (ON) = 0.26 Ω (typ.) ● High forward transfer admittance : |Yfs| = 8 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) ● Enhancement mode : Vth = 1.5 to 3.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis tor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2353: RDS(on)= 1.4 Ω(VGS= 10 V, ID= 2.5 A) 2SK2354: RDS(on)= 1.5 Ω(VGS= 10 V, ID= 2.5 A) • Low CissCiss= 670 pF TY

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis tor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2353: RDS(on)= 1.4 Ω(VGS= 10 V, ID= 2.5 A) 2SK2354: RDS(on)= 1.5 Ω(VGS= 10 V, ID= 2.5 A) • Low CissCiss= 670 pF TY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2355: RDS(on)= 1.4 Ω(VGS= 10 V, ID= 2.5 A) 2SK

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2355: RDS(on)= 1.4 Ω(VGS= 10 V, ID= 2.5 A) 2SK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2355: RDS(on)= 1.4 Ω(VGS= 10 V, ID= 2.5 A) 2SK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2355, 2SK2355-Z/2SK2356, 2SK2356-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2355: RDS(on)= 1.4 Ω(VGS= 10 V, ID= 2.5 A) 2SK

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK2357 / 2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

The 2SK2357 / 2SK2358 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.