SILICON N-CHANNEL ENHANCEMENT MOSFET

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • Low-voltage drive.

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications ● Low drain−source ON resistance : RDS (ON) = 1.5Ω (typ.) ● High forward transfer admittance : |Yfs| = 2.5 S (typ.) ● Low leakage current : IDSS = 300 µA (max) (VDS = 640 V) ● Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V,

Fast Switching Speed

DESCRIPTION • Drain Current ID= 5A@ TC=25℃ • Drain Source Voltage- : VDSS= 700V(Min) • Fast Switching Speed APPLICATIONS • Switching Regulators • DC-DC Converter, • Motor Control

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2275 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 2.8 W MAX. (VGS = 10 V, ID = 2.0 A) • LOW Ciss Ciss = 1 000 pF TYP. •

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

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N-channel MOS-FET

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Very High-Speed Switching Applications

Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Chopper Regulator, DC .DC Converter and Motor Drive Applications

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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