NCHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON-resistance : RDS (ON)= 0.28 Ω(typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 100 V) Enhancement mode : Vth= 0.8 to

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain-source ON-resistance : RDS (ON)= 0.28 Ω(typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 100 V) Enhancement mode : Vth= 0

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching

Silicon N Channel MOS FET

Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter Application High speed power switching

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 5.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 3.0Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

MOSFET

Sanken / MOS FET ( 2SK1177 thru 2SK3460)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 15A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.48Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 160V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 750V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Silicon N-channel MOSFET For switching circuits ■ Features • Low ON resistance • High-speed switching • Mini type package, allowing downsizing of the sets and automatic insertion through the magazine packing

Silicon N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 1A ● RDS(ON)

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter, Moter Control Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter, motor control Application High speed power switching

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter, motor control Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.76Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 10A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.76Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.2Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Features • High power output, high gain, high efficiency PG = 9.7 dB, Pout = 140 W, hD = 55 typ (f = 860 MHz) • Compact package Suitable for push - pull circuit Application UHF power amplifier

High-Frequency Low-Noise Amp Applications??????????

High-Frequency Low-Noise Amplifier Applications Features · Adoption of FBET process. · Amateur radio equipment. · UHF amplifiers, MIX, OSC, analog switches. · Large | yfs|. · Small Ciss.

Capacitor Microphone Applications?

Capacitor Microphone Applications Features • Ultrasmall-sized package permitting 2SK2219- •pplied sets to be made small and slim. • Especially suited for use in audio, telephone capacitor microphones. • Excellent voltage characteristic. • Excellent transient characteristic. • Adoption of FBE

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

High-Frequency, Low-Noise Amp Applications????????????

Low-Frequency, Low Noise Amplifier Applications Features · Ultralow noise figure. · Large |yfs| · Low gate leakage current.

Silicon N-Channel MOS FET

Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement–mode • Good complementary characteristics • Equipp

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

Old Company Name in Catalogs and Other Documents

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

Silicon N-Channel MOS FET

Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement–mode • Good complementary characteristics • Equipp

Silicon N Channel MOS FET

Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair

N-channel MOS-FET

FAP-IIA Series > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Pow

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

Silicon N Channel MOS FET

* High speed power switching * High breakdown voltage (VDSS= 1500 V) * High speed switching * Low drive current * No Secondary breakdown * Suitable for switching regulator, DC-DC converter

Silicon N-Channel MOS FET

* High breakdown voltage (VDSS= 1500 V) * High speed switching * Low drive current * No Secondary Breakdown * Suitable for Switching regulator, DC-DC converter

Silicon N Channel MOS FET

* High speed power switching * High breakdown voltage (VDSS= 1500 V) * High speed switching * Low drive current * No Secondary breakdown * Suitable for switching regulator, DC-DC converter

N-channel MOS-FET

N-channel MOS-FET >Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance >Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

N-channel MOS-FET

N-channel MOS-FET >Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance >Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Features -4V GATE DRIVE -Low Drain-Source ON Resistance : RDS(ON)=0.08 (Typ.) -High Forward Transfer Admittance : Yfs-6.08 (Typ.) -Low Leakage Current IDSS=100μA (Max.) (VDS=60V) -Enhancement-Mode : Vth=0.8-2.0V (VDS=10V, ID=1mA)

Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications

Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance : RDS (ON)= 0.12 Ω(typ.) High forward transfer admittance : |Yfs| = 5.0 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 60 V) Enhancement mode : Vth=

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS

Features - Low Drain-Source ON Resistance: RDS (ON)=1.20 (Typ.) - High Forward Transfer Admittance : Yfs=1.4S (Typ.) - Low Leakage Current IDSS-300A (Max.) (VDS-250V) - Enhancement-Mode : Vth=2.0~4.0V (VDS=10V, ID=1mA)

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC/DC Converter and Motor Drive Applications ● 4 V gate drive ● Low drain-source ON-resistance : RDS (ON) = 0.12 Ω (typ.) ● High forward transfer admittance : |Yfs| = 5.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) ● Enhancement mode : Vth = 0.8 to 2.0

Chopper Regulator, DC/DC Converter and Motor Drive Applications

Chopper Regulator, DC/DC Converter and Motor Drive Applications ● 4 V gate drive ● Low drain-source ON-resistance : RDS (ON) = 0.12 Ω (typ.) ● High forward transfer admittance : |Yfs| = 5.0 S (typ.) ● Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) ● Enhancement mode : Vth = 0.8 to 2.0

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

Chopper Regulator, DC−DC Converter and Motor Drive Applications 4-V gate drive Low drain−source ON resistance : RDS (ON)= 0.022 Ω(typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Low leakage current : IDSS= 100 μA (max) (VDS= 60 V) Enhancement mode : Vth= 0.8 to 2.

MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.