N CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications

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JFET

Junction FET (Surface mount type)

MOS FIELD EFFECT TRANSISTOR

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2090 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 2.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and

N-Channel MOS FET FOR HIGH-SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Impedance Converter Applications???

Impedance Converter Applications Features · Small IGSS. · Small Ciss. · Ultrasmall-sized package permitting 2SK2091-applied sets to be made smaller and slimmer. Applications · Low-frequency general-purpose amplifier applications. · Impedance conversion. · Infrared senso

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.35Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Small switching (60V, 2A)

Structure Silicon N-channel MOS FET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching

Silicon N-Channel MOSFET

Features Low on-resistance Fast switching speed Low-voltage drive Easily designed drive circuits

Small Switching

Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Easily designed drive circuits. 5) Low VGS(th). 6) Easy to parallel.

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Application High speed power switching

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 4A@ TC=25℃ · Drain Source Voltage -VDSS= 600V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC - DC converter. Application High speed power switching

N-channel MOS-FET

150V 0,08Ω 20A 50W > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 80mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel MOS-FET

150V 0,08Ω 20A 50W > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance - Avalanche Proof > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

N-channel MOS-FET

250V 0,85Ω 6A 20W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose

N-channel MOS-FET

250V 0,85Ω 6A 20W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 6A@ TC=25℃ · Drain Source Voltage -VDSS= 250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

Audio Frequency Low Noise Amplifier Applications

Audio Frequency Low Noise Amplifier Applications • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = −50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ • High input impedance: IGSS = −1 nA

Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications

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N-Channel 60-V (D-S) MOSFET

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N-Channel Junction Silicon FET Impedance Converter Applications

4V Drive Nch MOS FET

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isc N-Channel MOSFET Transistor

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4V Drive Nch MOS FET

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N-Channel MOSFET

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N-Channel 60 V (D-S) MOSFET

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

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