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位置：首页 > IC中文资料 > 2SK208

2SK208价格

参考价格：￥0.3900

型号：2SK208-GR 品牌：TOSHIBA 备注：这里有2SK208多少钱，2026年最近7天走势，今日出价，今日竞价，2SK208批发/采购报价，2SK208行情走势销售排行榜，2SK208报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK208

N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS)

General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.

TOSHIBA

东芝

2SK208

General Purpose and Impedance Converter and Condenser Microphone Applications

General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.

TOSHIBA

东芝

2SK208

General Purpose and Impedance Converter and Condenser Microphone Applications

General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.

TOSHIBA

东芝

2SK208

General Purpose and Impedance Converter and Condenser Microphone Applications

General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.

TOSHIBA

东芝

2SK208

General Purpose and Impedance Converter and Condenser Microphone Applications

General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.

TOSHIBA

东芝

2SK208

Junction FET (Surface mount type)

Application Scope：General-purpose\nPolarity：N-ch\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Gate Current IG 10 mA \nGate-drain Voltage VGDS -50 V ;

TOSHIBA

东芝

2SK208

Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications

文件：588.71 Kbytes Page：4 Pages

TOSHIBA

东芝

2SK2080-01R

N-CHANNEL SILICON POWER MOS-FET

Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche - proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier

FUJI

富士通

2SK2081-01

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2081-01

N-channel MOS-FET 500V 0,6Ω 12A 125W

- High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS = ± 30V Guarantee\n- Avalanche Proof Applications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier;

FUJI

富士通

2SK2082-01

N-channel MOS-FET

- High Speed Switching\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Voltage\n- VGS= ± 30V Guarantee\n- Avalanche ProofApplications\n- Switching Regulators\n- UPS\n- DC-DC converters\n- General Purpose Power Amplifier;

FUJI

富士通

2SK2082-01

N-channel MOS-FET

>Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof >Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier

FUJI

富士通

2SK2083

Very High-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting.

SANYO

三洋

2SK2084

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

2SK2084

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching

RENESAS

瑞萨

2SK2084L

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 20V(Min) · Static Drain-Source On-Resistance -RDS(on) = 53mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2084L

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

2SK2084L

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching

RENESAS

瑞萨

2SK2084L-E

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching

RENESAS

瑞萨

2SK2084S

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching

RENESAS

瑞萨

2SK2084S

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 20V(Min) · Static Drain-Source On-Resistance -RDS(on) = 53mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

2SK2084S

Silicon N-Channel MOSFET

Features ● Low on-resistance ● High speed switching ● Low drive current ● Suitable for Switching regulator, DC - DC converter

KEXIN

科信电子

2SK2084S

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

2SK2084STL-E

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching

RENESAS

瑞萨

2SK2085

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter

RENESAS

瑞萨

2SK2085

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter

HITACHIHitachi Semiconductor

日立日立公司

2SK2089

HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

Features - Low Drain-Source ON Resistance : RDS(ON)=1.8 (Typ.) - High Forward Transfer Admittance : Yfs=3.0S (Typ.) - Low Leakage Current IDSS=300μA (Max.) (VDS=640V) - Enhancement-Mode : Vth=1.5-3.5V (VDS=10V, ID=1mA)

TOSHIBA

东芝

2SK208-GR

General Purpose and Impedance Converter and Condenser Microphone Applications

General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.

TOSHIBA

东芝

2SK208-O

General Purpose and Impedance Converter and Condenser Microphone Applications

General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.

TOSHIBA

东芝

2SK208-R

General Purpose and Impedance Converter and Condenser Microphone Applications

General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.

TOSHIBA

东芝

2SK208-Y

General Purpose and Impedance Converter and Condenser Microphone Applications

General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.

TOSHIBA

东芝

2SK208_07

Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications

文件：588.71 Kbytes Page：4 Pages

TOSHIBA

东芝

2SK2080

isc N-Channel MOSFET Transistor

文件：294.34 Kbytes Page：2 Pages

ISC

无锡固电

2SK2080-01

Fast Switching Speed

文件：72.21 Kbytes Page：2 Pages

ISC

无锡固电

2SK2081-01

Fast Switching Speed

文件：70.69 Kbytes Page：2 Pages

ISC

无锡固电

2SK2082-01

Fast Switching Speed

文件：61.14 Kbytes Page：2 Pages

ISC

无锡固电

2SK2084L

丝印代码：IPAK；isc N-Channel MOSFET Transistor

文件：318.83 Kbytes Page：2 Pages

ISC

无锡固电

2SK2084L

N-Channel 30-V (D-S) MOSFET

文件：959.96 Kbytes Page：8 Pages

VBSEMI

微碧半导体

2SK2084S

N-Channel 30-V (D-S) MOSFET

文件：1.01522 Mbytes Page：8 Pages

VBSEMI

微碧半导体

2SK2084S

isc N-Channel MOSFET Transistor

文件：310.62 Kbytes Page：2 Pages

ISC

无锡固电

2SK2089-262

丝印代码：I2PAK；isc N-Channel MOSFET Transistor

文件：300.41 Kbytes Page：2 Pages

ISC

无锡固电

2SK2089-263

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：300.13 Kbytes Page：2 Pages

ISC

无锡固电

2SK208-O(TE85L,F)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：JFET N-CH 50V SC59 分立半导体产品 晶体管 - JFET

ETC

知名厂家

2SK208-R(TE85L,F)

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：JFET N-CH 50V S-MINI 分立半导体产品 晶体管 - JFET

ETC

知名厂家

2SK208产品属性

  • 类型

    描述

  • Polarity：

    N-ch

  • VGDS (Max)(V)：

    -50

  • IG (Max)(mA)：

    10

  • IDSS (Max)(mA)：

    6.5

  • IDSS (Min)(mA)：

    0.3

  • (Min)(mS)：

    1.2

  • Number of pins：

    3

  • Surface mount package：

    Y

  • Package name(Toshiba)：

    S-Mini

  • Width×Length×Height(mm)：

    2.9 x 2.5 x 1.1

  • Package Size(mm^2)：

    7.25

2SK208供应商更多...

更新时间：2026-8-1 17:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
2SK2082
FUJITSU/富士通
2450+
TO-247
9850
只做原装正品现货或订货假一赔十!
询价
深圳市坤融电子科技有限公司
2SK208-GR
TOSHIBA/东芝
2025+
SOT-23
5000
原装进口价格优 请找坤融电子!
询价
深圳市正纳电子有限公司
2SK208-GR
TOSHIBA
26+
TO-247
300000
东芝半导体QQ350053121正纳全系列代理经销
询价
深圳市赛特兴科技有限公司
2SK208-GR(TE85LF)
TOSHIBA
23+
SOT-23
108000
正规渠道,只有原装!
询价
中天科工半导体（深圳）有限公司
2SK208-GR
TOSHIBA/东芝
25+
SOT-23
32000
TOSHIBA/东芝全新特价2SK208-GR即刻询购立享优惠#长期有货
询价
深圳市佳斯泰科技有限公司
2SK2083-DL-E
ON
22+
-
2100
询价
深圳市卓越微芯电子有限公司
2SK208
TOSHIBA
25+
NA
12000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
深圳市创新迹电子有限公司
2SK208-GR
TOSHIBA
2021+
SOT23
6800
原厂原装,欢迎咨询
询价
深圳市弘为电子有限公司
2SK208-Y
TOSHIBA
24+
SOT-23
2770
原装现货假一罚十
询价
讯运(深圳/上海)电子有限公司
2SK2082
FUJI
18+
TO-3P
2500
原装正品房间现货
询价

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