2SK208资料使用说明书东芝供应代理商TOSHIBA-IC资料网

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2SK208价格

参考价格：￥0.3900

型号：2SK208-GR 品牌：TOSHIBA 备注：这里有2SK208多少钱，2025年最近7天走势，今日出价，今日竞价，2SK208批发/采购报价，2SK208行情走势销售排行榜，2SK208报价。

型号	功能描述	生产厂家企业	LOGO
2SK208	N CHANNEL JUNCTION TYPE (GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS) General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.	TOSHIBA 东芝	TOSHIBA
2SK208	General Purpose and Impedance Converter and Condenser Microphone Applications General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.	TOSHIBA 东芝	TOSHIBA
2SK208	General Purpose and Impedance Converter and Condenser Microphone Applications General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.	TOSHIBA 东芝	TOSHIBA
2SK208	General Purpose and Impedance Converter and Condenser Microphone Applications General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.	TOSHIBA 东芝	TOSHIBA
2SK208	General Purpose and Impedance Converter and Condenser Microphone Applications General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.	TOSHIBA 东芝	TOSHIBA
2SK208	Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications 文件：588.71 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SK208	Junction FET (Surface mount type)	TOSHIBA 东芝	TOSHIBA
2SK2080-01R	N-CHANNEL SILICON POWER MOS-FET Features ● High speed switching ● Low on-resistance ● No secondary breakdown ● Low driving power ● High voltage ● VGSS = ±30V Guarantee ● Avalanche - proof Applications ● Switching regulators ● UPS ● DC-DC converters ● General purpose power amplifier	Fuji 富士通	Fuji
2SK2081-01	N-channel MOS-FET > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = ± 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2082-01	N-channel MOS-FET >Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Avalanche Proof >Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier	Fuji 富士通	Fuji
2SK2083	Very High-Speed Switching Applications Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting.	SANYO 三洋	SANYO
2SK2084	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2084	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK2084L	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2084L	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK2084L	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 20V(Min) · Static Drain-Source On-Resistance -RDS(on) = 53mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2084L-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK2084S	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK2084S	Silicon N-Channel MOSFET Features ● Low on-resistance ● High speed switching ● Low drive current ● Suitable for Switching regulator, DC - DC converter	KEXIN 科信电子	KEXIN
2SK2084S	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter Application High speed power switching	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2084S	isc N-Channel MOSFET Transistor FEATURES · Drain Current -ID= 7A@ TC=25℃ · Drain Source Voltage -VDSS= 20V(Min) · Static Drain-Source On-Resistance -RDS(on) = 53mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
2SK2084STL-E	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter Application High speed power switching	RENESAS 瑞萨	RENESAS
2SK2085	Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK2085	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC - DC converter	RENESAS 瑞萨	RENESAS
2SK2089	HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. Features - Low Drain-Source ON Resistance : RDS(ON)=1.8 (Typ.) - High Forward Transfer Admittance : Yfs=3.0S (Typ.) - Low Leakage Current IDSS=300μA (Max.) (VDS=640V) - Enhancement-Mode : Vth=1.5-3.5V (VDS=10V, ID=1mA)	TOSHIBA 东芝	TOSHIBA
2SK208-GR	General Purpose and Impedance Converter and Condenser Microphone Applications General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.	TOSHIBA 东芝	TOSHIBA
2SK208-O	General Purpose and Impedance Converter and Condenser Microphone Applications General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.	TOSHIBA 东芝	TOSHIBA
2SK208-R	General Purpose and Impedance Converter and Condenser Microphone Applications General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.	TOSHIBA 东芝	TOSHIBA
2SK208-Y	General Purpose and Impedance Converter and Condenser Microphone Applications General Purpose and Impedance Converter and Condenser Microphone Applications • High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.	TOSHIBA 东芝	TOSHIBA
2SK208_07	Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications 文件：588.71 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SK2080	isc N-Channel MOSFET Transistor 文件：294.34 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2080-01	Fast Switching Speed 文件：72.21 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2081-01	Fast Switching Speed 文件：70.69 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2081-01	N-channel MOS-FET 500V 0,6Ω 12A 125W	Fuji 富士通	Fuji
2SK2082-01	N-channel MOS-FET	Fuji 富士通	Fuji
2SK2082-01	Fast Switching Speed 文件：61.14 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2084L	N-Channel 30-V (D-S) MOSFET 文件：959.96 Kbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2084L	isc N-Channel MOSFET Transistor 文件：318.83 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2084S	isc N-Channel MOSFET Transistor 文件：310.62 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2084S	N-Channel 30-V (D-S) MOSFET 文件：1.01522 Mbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
2SK2089-262	isc N-Channel MOSFET Transistor 文件：300.41 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK2089-263	isc N-Channel MOSFET Transistor 文件：300.13 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SK208-O(TE85L,F)	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：JFET N-CH 50V SC59 分立半导体产品晶体管 - JFET	ETC 知名厂家	ETC
2SK208-R(TE85L,F)	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：JFET N-CH 50V S-MINI 分立半导体产品晶体管 - JFET	ETC 知名厂家	ETC

2SK208产品属性

类型
描述
型号
2SK208
制造商
TOSHIBA
制造商全称
Toshiba Semiconductor
功能描述
Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications

2SK208供应商更多...

更新时间：2025-11-22 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	2SK208	TOSHIBA(东芝)	24+	NA/	8735	原厂直销,现货供应,账期支持!	询价
深圳市凌旭科技有限公司	2SK208-O	TOSHIBA	2016+	SOT23-3	42000	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	2SK208-Y	TOSH	23+	SOT23/	20000	全新原装假一赔十	询价
深圳市金芯世纪电子有限公司	2SK2084STL	RENESAS/瑞萨	22+	SOT252	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	2SK208-GR	TOSHIBA/东芝	23+	SOT-23	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市威雅利发展有限公司	2SK208-Y(TE85LF)	TOSHIBA	20+	SC-59	100	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市明嘉莱科技有限公司	2SK2084MOS(场效应管)	HITACHI/日立	24+	TO 262 263	158281	明嘉莱只做原装正品现货	询价
深圳市华睿芯科技有限公司	2SK208-Y	TOSHIBA	24+	SOT-23	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市粤骏腾电子科技有限公司	2SK208-Y	ZXWILL	24+	SOT23	98000	原装现货假一罚十	询价
深圳市冠亿通科技有限公司	2SK2083-DL-E	ON Sem	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价

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2SK2415-Z-E1-AZ找代理商上深圳百域芯科技
2SK2415-Z-E1-AZ找代理商上深圳百域芯科技芯片详细信息 Manufacturer Part Number: 2SK3065 Rohs Code: Yes Part Life Cycle Code: Obsolete Ihs Manufacturer: ROHM CO LTD Package Description: ， Reach Compliance Code: compliant ECCN Code: EAR99 Manufacturer:
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2SK208价格

2SK208产品属性

2SK208供应商更多...

2SK208芯片相关品牌

2SK208规格书下载地址

2SK208参数引脚图相关

2SK208数据表相关新闻

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK2415-Z-E1-AZ找代理商上深圳百域芯科技

2SK1485-T1

2SK2698

2SK1985

2SK1985-01MR

DdatasheetPDF页码索引