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Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

* Low on-resistance * High speed switching * Low drive current * No secondary breakdown * Suitable for switchingregulator, DC-DC converter

RENESAS

瑞萨

Fast Switching Speed

DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·High Breakdown Voltage

ISC

无锡固电

Silicon N Channel MOS FET

* Low on-resistance * High speed switching * Low drive current * No secondary breakdown * Suitable for switchingregulator, DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter

RENESAS

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

Low on-resistance

DESCRIPTION • Drain Current ID= 5A@ TC=25℃ • Drain Source Voltage : VDSS= 600V(Min) • Fast Switching Speed • Low on-resistance • For switchinggregulator,DC-DC Converter APPLICATIONS • High speed power switching

ISC

无锡固电

Fast Switching Speed

文件:64.9 Kbytes Page:2 Pages

ISC

无锡固电

Fast Switching Speed

文件:48.57 Kbytes Page:2 Pages

ISC

无锡固电

Power MOSFETs

RENESAS

瑞萨

Power MOSFETs

RENESAS

瑞萨

丝印代码:D2PAK;isc N-Channel MOSFET Transistor

文件:299.31 Kbytes Page:2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

文件:33.53 Kbytes Page:6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Transistors>Switching/MOSFETs

RENESAS

瑞萨

2SK180产品属性

  • 类型

    描述

  • 封装类型:

    TO-220AB

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • 配置[器件]:

    Built-In SBD

  • VDSS (V) 最大值:

    900

  • ID (A):

    4

  • RDS (ON)(mΩ) 最大值@10V或8V:

    4000

  • Ciss (pF) 典型值:

    740

  • Vgs (off) (V) 最大值:

    3

  • VGSS (V):

    30

  • Pch (W):

    60

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

更新时间:2026-7-23 17:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
24+
TO220
16900
原装正品现货支持实单
Renesas
21+
标准封装
4007
进口原装,订货渠道!
RENESAS/瑞萨
2025+
TO-220
5000
原装进口价格优 请找坤融电子!
HITACHI/日立
25+
15000
本公司 只做全新原装正品
RENESAS
1447+
TO-220
351
全新 发货1-2天
RENESAS/瑞萨
24+
TO-220
21574
郑重承诺只做原装进口现货
24+
2000
RENESAS
26+
TO220
360000
进口原装现货
HITACHI/日立
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
RENESAS
25+
TO220
20000
原装

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