位置:首页 > IC中文资料 > 2SK133

2SK133价格

参考价格:¥1.0400

型号:2SK1334BY 品牌:HITACHI 备注:这里有2SK133多少钱,2026年最近7天走势,今日出价,今日竞价,2SK133批发/采购报价,2SK133行情走势销售排行榜,2SK133报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SK133

LOW FREQUENCY POWER AMPLIFIER

HITACHIHitachi Semiconductor

日立日立公司

2SK133

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.4Ω(Max)@VGS= 10V DESCRITION ·Switching power supplies ·Switching converters,motor driver,relay driver

ISC

无锡固电

2SK133

iscN-Channel MOSFET Transistor

文件:827.15 Kbytes Page:2 Pages

ISC

无锡固电

2SK133

LOW FREQUENCY POWER AMPLIFIER

HITACHIHitachi Semiconductor

日立日立公司

Low-Frequency General-Purpose Amp Applications???

Low-Frequency General-Purpose Amplifier Applications Applications · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Features · Ultrasmall-sized package permitting 2SK1332 applied sets to be made smaller and slimm

SANYO

三洋

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter

HITACHIHitachi Semiconductor

日立日立公司

Nch Single Power Mosfet 200V 1A 3800Mohm Upak/Sc-62

The 2SK1334 is a Nch Single Power Mosfet 200V 1A 3800Mohm Upak/Sc-62.

RENESAS

瑞萨

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

HITACHIHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

RENESAS

瑞萨

Silicon N-Channel MOS FET

Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power s

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power s

RENESAS

瑞萨

Silicon N Channel MOS FET

Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power s

RENESAS

瑞萨

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N-Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

HITACHIHitachi Semiconductor

日立日立公司

Silicon N Channel MOS FET

• Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching

RENESAS

瑞萨

Drain Current ?밒D=8A@ TC=25C

文件:64.48 Kbytes Page:2 Pages

ISC

无锡固电

Drain Current ?밒D=8A@ TC=25C

文件:64.47 Kbytes Page:2 Pages

ISC

无锡固电

Drain Current ?밒D=15A@ TC=25C

文件:64.5 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

文件:300.6 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 200 V (D-S) MOSFET

文件:963.21 Kbytes Page:6 Pages

VBSEMI

微碧半导体

丝印代码:IPAK;isc N-Channel MOSFET Transistor

文件:318.12 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:DPAK;isc N-Channel MOSFET Transistor

文件:309.92 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:288.52 Kbytes Page:2 Pages

ISC

无锡固电

Fast Switching Speed

文件:67.07 Kbytes Page:2 Pages

ISC

无锡固电

2SK133产品属性

  • 类型

    描述

  • 封装类型:

    DPAK(L)

  • Nch/Pch:

    Nch

  • 通道数:

    Single

  • VDSS (V) 最大值:

    200

  • ID (A):

    3

  • 应用:

    Industrial

  • 安装类型:

    Through Hole

更新时间:2026-8-2 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
Renesas(瑞萨)
24+
标准封装
7430
支持大陆交货,美金交易。原装现货库存。
HITACHI
2016+
SOT-252
3500
只做原装,假一罚十,公司可开17%增值税发票!
RENESAS
24+
TO252
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
Hitachi
25+23+
Sot-89
32636
绝对原装正品全新进口深圳现货
RENESAS/瑞萨
22+
TO252
8000
原装正品支持实单
RENESAS/瑞萨
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
HITACHI
24+
SOT252
24000
HITACHI
19+
TO-252
8703
HITACHI/日立
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百

2SK133数据表相关新闻