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2SK133价格
参考价格：￥1.0400
型号：2SK1334BY 品牌：HITACHI 备注：这里有2SK133多少钱，2026年最近7天走势，今日出价，今日竞价，2SK133批发/采购报价，2SK133行情走势销售排行榜，2SK133报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK133 | LOW FREQUENCY POWER AMPLIFIER
| HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SK133 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.4Ω(Max)@VGS= 10V DESCRITION ·Switching power supplies ·Switching converters,motor driver,relay driver | ISC 无锡固电 | | |
2SK133 | LOW FREQUENCY POWER AMPLIFIER | HITACHIHitachi Semiconductor 日立日立公司 | | |
2SK133 | iscN-Channel MOSFET Transistor 文件：827.15 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Low-Frequency General-Purpose Amp Applications??? Low-Frequency General-Purpose Amplifier Applications Applications · Ideal for use in variable resistors, analog switches, low-frequency amplifiers, and constant-current circuits. Features · Ultrasmall-sized package permitting 2SK1332 applied sets to be made smaller and slimm | SANYO 三洋 | | ||
Silicon N Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power s | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power s | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power s | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon N-Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
Drain Current ?밒D=8A@ TC=25C 文件：64.48 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Drain Current ?밒D=8A@ TC=25C 文件：64.47 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Drain Current ?밒D=15A@ TC=25C 文件：64.5 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor 文件：300.6 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Nch Single Power Mosfet 200V 1A 3800Mohm Upak/Sc-62 | RENESAS 瑞萨 | | ||
N-Channel 200 V (D-S) MOSFET 文件：963.21 Kbytes Page：6 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：318.12 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：309.92 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor 文件：288.52 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Fast Switching Speed 文件：67.07 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK133产品属性
- 类型
描述
- 型号
2SK133
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
LOW FREQUENCY POWER AMPLIFIER
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
7430 |
支持大陆交货,美金交易。原装现货库存。 |
|||
onsemi |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
SANYO |
24+ |
SOT323 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
HITACHI/日立 |
24+ |
TO 263 |
158482 |
明嘉莱只做原装正品现货 |
|||
SANYO/三洋 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
松下 |
24+ |
TO-3P |
6980 |
原装现货,可开13%税票 |
|||
Sanyo |
25+23+ |
Sot-323 |
32635 |
绝对原装正品全新进口深圳现货 |
|||
RENESAS/瑞萨 |
2025+ |
SOT-89 |
5000 |
原装进口价格优 请找坤融电子! |
|||
RENESAS |
26+ |
TO252 |
360000 |
进口原装现货 |
|||
SANYO |
24+ |
SOT-323 |
6200 |
新进库存/原装 |
2SK133规格书下载地址
2SK133参数引脚图相关
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2SK133数据表相关新闻
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2019-10-30
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