位置：首页 > IC中文资料第7837页 > 2SK1155-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SK1155-E | Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 |   | |
Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Application High speed power switching | RENESAS 瑞萨 | | ||
N-Channel 600V (D-S) Power MOSFET 文件：1.93403 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
isc N-Channel MOSFET Transistor 文件：305.19 Kbytes Page：2 Pages | ISC 无锡固电 | |
2SK1155-E产品属性
- 类型
描述
- 型号
2SK1155-E
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon N Channel MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HITACHI |
06+ |
TO-220 |
15 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HIT |
23+ |
TO-220 |
5000 |
专做原装正品,假一罚百! |
|||
VBSEMI/台湾微碧 |
23+ |
TO-220AB |
50000 |
全新原装正品现货,支持订货 |
|||
RENESAS |
24+ |
TO-220 |
16900 |
原装正品现货支持实单 |
|||
R |
25+ |
TO-TO-220 |
37650 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
24+ |
2000 |
||||||
Renesas |
17+ |
TO-220 |
6200 |
||||
Renesas |
26+ |
SOP8 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS/瑞萨 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
日立 |
TO-220 |
22+ |
6000 |
十年配单,只做原装 |
2SK1155-E规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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