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N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS Field Effect Transistor

Features ● Directly driven by Ics having a 5V power source. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the biasresistor.

KEXIN

科信电子

Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL MOSFET DESCRIPTION The 2SK1133, N-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SK1133 has excellent switching characteristics and is suitable for use as a high-speed switching devi

RENESAS

瑞萨

2SK1133-A产品属性

  • 类型

    描述

  • 型号

    2SK1133-A

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA

更新时间:2026-1-27 22:58:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
2016+
SOT-23
44540
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NEC
23+
SOT23/
20000
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NEC
06+
SOT23/
2445
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RENESAS/瑞萨
23+
SOT-23
100586
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NEC
24+
SOT23
20000
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NEC
24+
SOT23
98000
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SOT-23
23+
NA
15659
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新年份
SOT-23
42000
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23+
SOT23
6000
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NEC
24+
8858
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