型号 功能描述 生产厂家 企业 LOGO 操作
2SK108

Low Noise Audio Amplifier Applications

文件:647.58 Kbytes Page:5 Pages

TOSHIBA

东芝

N-CHANNEL SILICON POWER MOS-FET

FUJI POWER MOS-FET (F-II SERIES) Features 1. High Speed switching 2. Low on-resistance 3. No secondary breakdown 4. Low driving power 5. High voltage Applications 1. Switching regulators 2. UPS 3. DC-DC converters 4. General purpose power amplifier

Fuji

富士通

N-CHANNEL SILICON POWER MOS-FET

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Silicon Power MOS-FET

Fuji

富士通

N-Channel Silicon Power MOS-FET

Fuji

富士通

N-channel MOS-FET

60V 0,22Ω 8A 20W >Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance >Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 8.0A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.22Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel MOS-FET

60V 0,22Ω 8A 20W >Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance >Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 5A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 20A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) =70mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.17Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

N-channel MOS-FET

F-III Series N-channel MOS-FET 150V 0,3Ω 9A 35W > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9A@ TC=25℃ · Drain Source Voltage -VDSS= 150V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.3Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

N-channel MOS-FET

F-III Series N-channel MOS-FET 150V 0,3Ω 9A 35W > Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

Fuji

富士通

N-channel MOS-FET

* Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance

Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) =0.035Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Drain Current ?밒D=7A@ TC=25C

文件:69 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOS-FET

Fuji

富士通

Trans MOSFET N-CH 60V 8A 3-Pin TO-220F15

ETC

知名厂家

Drain Current ?밒D=6A@ TC=25C

文件:69 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel Silicon Power MOS-FET

Fuji

富士通

Isc N-Channel MOSFETransistor

文件:271.32 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 60 V(D-S) MOSFET

文件:1.0876 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Isc N-Channel MOSFETransistor

文件:270.85 Kbytes Page:2 Pages

ISC

无锡固电

Isc N-Channel MOSFETransistor

文件:271.01 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:313 Kbytes Page:2 Pages

ISC

无锡固电

Isc N-Channel MOSFETransistor

文件:271.5 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件:2.87485 Mbytes Page:8 Pages

VBSEMI

微碧半导体

Isc N-Channel MOSFETransistor

文件:271.71 Kbytes Page:2 Pages

ISC

无锡固电

Isc N-Channel MOSFETransistor

文件:271.15 Kbytes Page:2 Pages

ISC

无锡固电

Isc N-Channel MOSFETransistor

文件:273.03 Kbytes Page:2 Pages

ISC

无锡固电

N-CHANNEL MOS-FET

文件:212.12 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SK108产品属性

  • 类型

    描述

  • 型号

    2SK108

  • 功能描述

    TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D) | TO-247

更新时间:2025-12-25 12:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FUJI
2023+
TO-247
58000
进口原装,现货热卖
FUJI/富士电机
23+
TO220F
28888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
FUJITSU/富士通
24+
NA/
3265
原装现货,当天可交货,原型号开票
FUJI/富士电机
25+
TO-3P
45000
FUJI/富士电机全新现货2SK1089即刻询购立享优惠#长期有排单订
FUJITSU/富士通
22+
TO220F
12245
现货,原厂原装假一罚十!
FUJITSU/富士通
24+
TO220F
9600
原装现货,优势供应,支持实单!
FUJI/富士电机
25+
TO-3P
880000
明嘉莱只做原装正品现货
FUJITSU/富士通
23+
13+
6500
专注配单,只做原装进口现货
FUJITSU/富士通
2447
TO220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
FUJI
1922+
TO-220
2000
公司原装现货特价处理

2SK108数据表相关新闻