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型号 功能描述 生产厂家 企业 LOGO 操作
2SJ79-E

Silicon P Channel MOS FET

Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode

RENESAS

瑞萨

Silicon P Channel MOS FET

Description High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216 Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -0.5A@ TC=25℃ ·Drain Source Voltage -VDSS= -200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.0Ω(Max)@VGS = -10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Silicon P-Channel MOS FET

Features • Suitable for direct mounting • High forward transfer admittance • Excellent frequency response • Enhancement-mode Application High frequency and low frequency power amplifier, high speed power switching Complementary pair with 2SK213, 2SK214, 2SK215, 2SK216

HITACHIHitachi Semiconductor

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2SJ79-E产品属性

  • 类型

    描述

  • 型号

    2SJ79-E

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    TRANS MOSFET P-CH 200V 0.5A 3PIN TO-220AB - Rail/Tube

更新时间:2026-5-24 8:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Renesas-Hit
21+
标准封装
100
进口原装,订货渠道!

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