TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

Relay Drive, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) (VGS = −10 V) ● High forward transfer admittance: |Yfs| = 5.0 S (typ.) ● Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) ● Enhancement mode: Vth = −0.8

P-Channel 4 0 V (D-S) MOSFET

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Power MOSFET (P-ch single)

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

文件：160.7 Kbytes Page：6 Pages

Relay Drive, DC?묭C Converter and Motor Drive Applications

Relay Drive, DC−DC Converter and Motor Drive Applications ● 4-V gate drive ● Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) (VGS = −10 V) ● High forward transfer admittance: |Yfs| = 5.0 S (typ.) ● Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) ● Enhancement mode: Vth = −0.8

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

文件：160.7 Kbytes Page：6 Pages

High Voltage Color Display Horizontal

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