isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -36A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.02Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs for Automotive

Support is limited to customers who have already adopted these products.\n\nThe 2SJ673 is P-channel MOS Field Effect Transistor designed for high current switching applications. • Super low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = −10 V, ID = −18 A) RDS(on)2 = 31 mΩ MAX. (VGS = −4.0 V, ID = −18 A)\n• Low Ciss: Ciss = 4600 pF TYP.\n• Built-in gate protection diode;

Old Company Name in Catalogs and Other Documents

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SWITCHING P-CHANNEL POWER MOS FET

文件：288.76 Kbytes Page：10 Pages