MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 48 mΩMAX. (VGS= –10 V, ID= –10 A) RDS(on)2= 75 mΩMAX. (VGS= –4.0 V, ID= –10 A) • Low inpu

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.048Ω(Max)@VGS= -10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

Pch Single Power Mosfet -60V -20A 48Mohm Mp-45F/To-220

The 2SJ649 is a Pch Single Power Mosfet -60V -20A 48Mohm Mp-45F/To-220. • Low on-state resistance:RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A)RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A)\n• Low input capacitance:Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V)\n• Built-in gate protection diode;

SWITCHING P-CHANNEL POWER MOS FET

文件：210.83 Kbytes Page：10 Pages

SWITCHING P-CHANNEL POWER MOS FET

文件：210.83 Kbytes Page：10 Pages