MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 2.5 V drive

丝印代码：H22；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swit

Pch Single Power Mosfet -20V -0.4A 1450Mohm Ssp/Sc-70

The 2SJ647 is a Pch Single Power Mosfet -20V -0.4A 1450Mohm Ssp/Sc-70. • 2.5 V drive available\n• Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SJ647 Data Sh;

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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