MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 1.8 V drive

丝印代码：XG；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ621 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power swi

Pch Single Power Mosfet -12V -3.5A 44Mohm Tmm/Sc-96

The 2SJ621 is a Pch Single Power Mosfet -12V -3.5A 44Mohm Tmm/Sc-96. • 1.8 V drive available\n• Low on-state resistance RDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID = –2.0 A) RDS(on)2 = 56 mΩ MAX. (VGS = –3.0 V, ID = –2.0 A) RDS(on)3 = 62 mΩ MAX. (VGS = –2.5 V, ID = –2.0 A) RDS(on)4 = 105 mΩ MAX. (VGS = –1.8 V, ID = –1.5 A)\n文档文档标题类型日期Attention of Handling Semiconductor D;

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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