SWITCHING P-CHANNEL POWER MOS FET

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 130 mΩMAX. (VGS= –10 V, ID= –6 A) RDS(on)2= 190 mΩMAX. (VGS= –4.0 V, ID= –6 A) •Low

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ci

Pch Single Power Mosfet -60V -12A 130Mohm Mp-3/To-251

The 2SJ598 is a Pch Single Power Mosfet -60V -12A 130Mohm Mp-3/To-251. • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)\n• Low Ciss: Ciss = 720 pF TYP.\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档2021年4月16日2SJ59;

P-Channel 4 0 V (D-S) MOSFET

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SWITCHING P-CHANNEL POWER MOS FET

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1= 130 mΩMAX. (VGS= –10 V, ID= –6 A) RDS(on)2= 190 mΩMAX. (VGS= –4.0 V, ID= –6 A) •Low

Isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 130mΩ(Max)@VGS= -10V DESCRIPTION ·Solenoid, motor and lamp driver

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ci

Pch Single Power Mosfet -60V -12A 130Mohm Mp-3Z/To-252

The 2SJ598-Z is a Pch Single Power Mosfet -60V -12A 130Mohm Mp-3Z/To-252. • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)\n• Low Ciss: Ciss = 720 pF TYP.\n• Built-in gate protection diode\n• TO-251/TO-252 package\n文档文档标题类型日期Attention of Handling Semiconductor DevicesPDF648 KB日本語应用文档 2021年4月16日2SJ5;

Pch Single Power Mosfet -60V -12A 130Mohm Mp-3Zk/To-252

The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. • Low on-state resistance:RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A)RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)\n• Built-in gate protection diode\n• TO-251/TO-252 package\n;

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A) RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A) • Low Ci

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANSISTOR 分立半导体产品 晶体管 - FET，MOSFET - 单个

SWITCHING P-CHANNEL POWER MOS FET

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