位置：首页 > IC中文资料第9374页 > 2SJ576
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ576 | Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK) | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ576 | Silicon P Channel MOS FET High Speed Switching Features • Low on-resistance RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK) | RENESAS 瑞萨 | | |
2SJ576 | Silicon P Channel MOS FET High Speed Switching | RENESAS 瑞萨 | |
2SJ576产品属性
- 类型
描述
- 型号
2SJ576
- 制造商
RENESAS
- 制造商全称
Renesas Technology Corp
- 功能描述
Silicon P Channel MOS FET High Speed Switching
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SOT-323 |
50000 |
原装正品 支持实单 |
|||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
HITACHI/日立 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS |
26+ |
SOT323 |
360000 |
进口原装现货 |
|||
ON/安森美 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
HIT |
24+ |
SOT-323 |
20000 |
||||
RENESAS |
24+ |
SOT23 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
24+ |
SOT-323 |
6300 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
HITACHI |
0203+ |
SOT-323 |
6030 |
||||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
国产 |
2SJ576芯片相关品牌
2SJ576规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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