位置：首页 > IC中文资料第1185页 > 2SJ534-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ534-E | Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 |   | |
Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. | RENESAS 瑞萨 | | ||
P-Channel 60 V (D-S) MOSFET 文件：932.71 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | |
2SJ534-E产品属性
- 类型
描述
- 型号
2SJ534-E
- 制造商
Renesas Electronics Corporation
- 功能描述
Bulk
- 制造商
Renesas Electronics Corporation
- 功能描述
Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) TO-220FM Box Bulk
- 制造商
Renesas Electronics Corporation
- 功能描述
Pch MOSFET,60V,18A,50m ohm,TO-220FM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
NA/ |
31500 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
20+ |
TO-220F |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA/东芝 |
21+ |
TO-92 |
1709 |
||||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Renesas(瑞萨) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
RENESAS |
2450+ |
TO-220F |
18500 |
只做原厂原装正品终端客户免费申请样品 |
|||
PAN |
24+ |
SOT-323 |
4000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
日立 |
24+ |
TO-220F |
27500 |
原装正品,价格最低! |
|||
HIT |
24+ |
TO-220F |
20000 |
||||
TOSHIBA/东芝 |
22+ |
TO-92 |
12245 |
现货,原厂原装假一罚十! |
2SJ534-E芯片相关品牌
2SJ534-E规格书下载地址
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DdatasheetPDF页码索引
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