| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ352 | Silicon P-Channel MOS FET Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with gate protection diodes Application Low frequency power amplifier Complementary pair | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ352 | Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with | RENESAS 瑞萨 | | |
2SJ352 | Power MOSFETs | RENESAS 瑞萨 | | |
Silicon P Channel MOS FET Description Low frequency power amplifier Complementary pair with 2SK2220, 2SK2221 Features • High power gain • Excellent frequency response • High speed switching • Wide area of safe operation • Enhancement-mode • Good complementary characteristics • Equipped with | RENESAS 瑞萨 | |
2SJ352产品属性
- 类型
描述
- Vgs (off) (V) max.：
-1.45
- Nch/Pch：
Pch
- VGSS (V)：
20
- Number of Channels：
Single
- Pch (W)：
100
- Configuration [Device]：
Built-In SBD
- Application：
Automotive Use
- VDSS (V) max.：
-200
- Mounting Type：
Through Hole
- ID (A)：
-8
- Package Type：
TO-3P
- RDS (ON) (mohm) max. @10V or 8V：
1.45
- Production Status：
Non-promotion
- Ciss (pF) typ.：
800
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
RENESAS |
24+ |
TO-3P |
15 |
||||
HITACHI |
18+ |
TO-3P |
85600 |
保证进口原装可开17%增值税发票 |
|||
HITACHI |
22+ |
TO-3P |
20000 |
公司只有原装 品质保证 |
|||
日立 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
RENESAS/瑞萨 |
23+ |
TO3P |
12568 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
日立 |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
|||
RENESAS/瑞萨 |
23+ |
TO3P |
50000 |
全新原装正品现货,支持订货 |
|||
HITACHI |
2023+ |
3000 |
进口原装现货 |
||||
renesas |
25+ |
500000 |
行业低价,代理渠道 |
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2SJ352规格书下载地址
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