P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

* 4 V gate drive * Low drain−source ON resistance : RDS (ON)= 80 mΩ(typ.) * High forward transfer admittance : |Yfs| = 8.0 S (typ.) * Low leakage current : IDSS= −100 µA (max) (VDS= −60 V) * Enhancement−mode : Vth= −0.8~−2.0 V (VDS= −10 V, ID= −1mA)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSIV) DC .DC Converter, Relay Drive and Motor Drive Applications

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：393.87 Kbytes Page：6 Pages

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：695.9 Kbytes Page：6 Pages

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：695.9 Kbytes Page：6 Pages

DC−DC Converter, Relay Drive and Motor Drive Applications

文件：393.87 Kbytes Page：6 Pages

P-Channel Enhancement MOSFET

文件：193.24 Kbytes Page：4 Pages