| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SJ294 | Silicon P Channel MOS FET Features • Low on–resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings Application High speed power switching | HITACHIHitachi Semiconductor 日立日立公司 |   | |
2SJ294 | isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.065Ω(Max)@VGS= -10V APPLICATIONS · High Speed Power Switching | ISC 无锡固电 | | |
2SJ294 | Power MOSFETs | RENESAS 瑞萨 | |
2SJ294产品属性
- 类型
描述
- 封装类型：
TO220FM
- Nch/Pch：
Pch
- 通道数：
Single
- VDSS (V) 最大值：
60
- ID (A)：
20
- 应用：
Industrial
- 安装类型：
Through Hole
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
2000 |
||||||
HITACHI/日立 |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
2SJ294芯片相关品牌
2SJ294规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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