位置：首页 > IC中文资料第7737页 > 2SJ200Y
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
丝印代码：J200；P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION) High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529 | TOSHIBA 东芝 |   | ||
丝印代码：J200；TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529 | TOSHIBA 东芝 | | ||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | | ||
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529 | TOSHIBA 东芝 | | ||
丝印代码：J200；High Power Amplifier Application 文件：426.58 Kbytes Page：5 Pages | TOSHIBA 东芝 | |
2SJ200Y产品属性
- 类型
描述
- 功能描述：
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SINGA |
23+ |
SMD |
24000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
TOS |
25+ |
TO-3P(N) |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
TOSHIBA |
2602+ |
TO-220(NIS) |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
TOSHIBA |
15+ |
TO-247 |
11560 |
全新原装,现货库存,长期供应 |
|||
TOSHIBA/东芝 |
最新 |
TO-3P |
9200 |
公司原装现货假一罚十特价欢迎来电咨询 |
|||
TOSHIBA/东芝 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
|||
Toshiba |
26+ |
SOT23 |
6980 |
原装现货,可开13%税票 |
|||
TOSHIBA/东芝 |
2540+ |
TO-3P(N) |
8595 |
只做原装正品假一赔十为客户做到零风险!! |
|||
HITACHI |
24+ |
60000 |
|||||
23+ |
TO-3P |
3000 |
原装正品假一罚百!可开增票! |
2SJ200Y芯片相关品牌
2SJ200Y规格书下载地址
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2019-10-30
DdatasheetPDF页码索引
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