Silicon NPN epitaxial planar type

Features ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the lowvoltage power supply.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use as AF output amplifier and flash unit.

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low-voltage power supply.

TRANSISTOR (NPN)

Features Power dissipation PCM : 0.75 W (Tamb = 25°C) Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low-voltage power supply.

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low-voltage power supply.