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型号 功能描述 生产厂家 企业 LOGO 操作
2SD965B

LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR

LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965B : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit

UTC

友顺

2SD965B

Bipolar Transistor

UTC

友顺

NPN EPITAXIAL SILICON TRANSISTOR

文件:105.67 Kbytes Page:3 Pages

UTC

友顺

TRANSISTOR (NPN)

Features Power dissipation PCM : 0.75 W (Tamb = 25°C) Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V

WINGS

永盛电子

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low-voltage power supply.

PANASONIC

松下

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low-voltage power supply.

PANASONIC

松下

LOW VOLTAGE HIGH CURRENT TRANSISTOR

LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter voltage up to 20 V * UTC 2SD965A: Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit

UTC

友顺

2SD965B产品属性

  • 类型

    描述

  • BVCEO(V):

    30

  • BVCBO(V):

    40

  • IC(A):

    5

  • HFE_MIN.:

    230

  • HFE_MAX.:

    800

  • HFEtest_IC(mA):

    500

  • HFEtest_VCE(V):

    2

  • VCE(Sat)(V)MAX.:

    1

  • VCE(Sat)test_IC(mA):

    3000

  • VCE(Sat)test_Ib(mA):

    100

  • Package:

    TO-92

2SD965B数据表相关新闻