TO-126 Plastic-Encapsulate Transistors

FEATURES Low Voltage High Current

Silicon NPN transistor in a TO-126F Plastic Package.

Descriptions Silicon NPN transistor in a TO-126F Plastic Package. Features Low saturation voltage, excellent hFE linearity and high hFE. Applications Power amplifier and switching applications.

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

2SB776 PNP Epitaxial Planar Transistors, 2SD886 NPN Epitaxial Planar Transistors

2SB776 PNP Epitaxial Planar Transistors 2SD886 NPN Epitaxial Planar Transistors P/b Lead(Pb)-Free

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃