POWER TRANSISTORS(5A,1500V,50W)

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

High voltage,high-speed switching npn transistors in a metal envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Built-in damper diode • High voltage ,high speed • Low collector saturation voltage APPLICATIONS • For color TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Built-in damper diode • High voltage ,high speed • Low collector saturation voltage APPLICATIONS • For color TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Built-in damper diode • High voltage ,high speed • Low collector saturation voltage APPLICATIONS • For color TV horizontal output applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Built-in damper diode • High voltage ,high speed • Low collector saturation voltage APPLICATIONS • For color TV horizontal output applications

POWER TRANSISTORS(6A,1500V,50W)

HORIZONTAL DEFLECTION POWER TRANSISTORS 6 AMPERE POWER TRANSISTORS 1500 VOLTS 50 WATTS

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·High power amplifier applications. ·High power switching applications. ·DC-DC converter applications. ·Regulator applications.

TRANSISTOR (NPN)

FEATURES ● Low Collector-Emitter Saturation Voltage ● Large Collector Power Dissipation ● Mini Power Type Package

Silicon NPN Epitaxial Planar Type

Features ● Large collector power dissipation PC. ● Low collector-emitter saturation voltage VCE(sat). ● Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A ■Features ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) ■ Features • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Mini power type package, allowing downsizing of the equipme

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) ■ Features • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Mini power type package, allowing downsizing of the equipme

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation Mini Power Type Package

SOT-89 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector-Emitter Saturation Voltage ● Large Collector Power Dissipation ● Mini Power Type Package ● Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

NPN Transistors

Features ● Large collector power dissipation PC. ● Low collector-emitter saturation voltage VCE(sat). ● Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Complementary to 2SB766A

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A

Plastic-Encapsulate Transistors

FEATURES • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Complementary to 2SB766A

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) ■ Features • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Mini power type package, allowing downsizing of the equipme

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) ■ Features • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Mini power type package, allowing downsizing of the equipme

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD874 and 2SD874A ■Features ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the

NPN Plastic Encapsulated Transistor

FEATURES • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Complementary to 2SB766A

TRANSISTOR (NPN)

FEATURES • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) • Complementary to 2SB766A

NPN Transistors

Features ● Large collector power dissipation PC. ● Low collector-emitter saturation voltage VCE(sat). ● Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

NPN Transistors

Features ● Large collector power dissipation PC. ● Low collector-emitter saturation voltage VCE(sat). ● Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

NPN Transistors

Features ● Large collector power dissipation PC. ● Low collector-emitter saturation voltage VCE(sat). ● Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

For Low-Frequency Power Amplification

Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) ■ Features • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini power type package, allowing downsizing of the equipment and automatic insertio

Silicon PNP epitaxial planer type(For low-frequency output amplification)

For low-frequency output amplification Complementary to 2SD0875 (2SD875) ■ Features • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing a

Silicon NPN epitaxial planer type(For low-frequency power amplification)

Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) ■ Features • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini power type package, allowing downsizing of the equipment and automatic insertio

Silicon NPN Epitaxial Planar Type

■ Features ● Large collector power dissipation PC. ● High collector to emitter voltage VCEO. ● Complimentary to 2SB767

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar

Si NPN Epitaxial Planar

HIGH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS.

FEATURES: • Low Saturation Voltage: VCE (sat)=0.5V (Typ.) (IC-3A)

HIGH POWER AMPLIFIER APPLICATIONS

High Power Amplifier Applications. High Power Switching Applications. DC-DC converter Applications. Regulator Applications. Features 1. High Power Dissipation : Pc = 115W (Tc =25 c) 2. High Collector Current : Ic = 15A 3. Low Saturation Voltage

isc Silicon NPN Power Transistor

DESCRIPTION 1. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V (Min) 2. High Power Dissipation 3. High Current Capability APPLICATIONS 1. High power amplifier applications. 2. High power switching applications. 3. DC-DC converter applications. 4. Regulator applications.

1.5V, 3V Strobe Applications

· In applications where two NiCd batteries are used to provide 2.4V, two 2SD879s are used. · The charge time is approximately 1 second faster than that of germanium transistors. · Less power dissipation because of low Collector-to Emitter Voltage VCE(sat), permitting more flashes of

TO-92 Plastic-Encapsulate Transistors

FEATURES In Applications Where Two NiCd Batteries are Used to rovide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors. Less power dissipation because of low Collector-to-Emitter Voltage VCE(sat), permitting more flashes of light

TO-92 Plastic-Encapsulate Transistors

FEATURES In Applications Where Two NiCd Batteries are Used to rovide 2.4V, two 2SD879s are used. The charge time is approximately 1 second faster Than that of germanium transistors. Less power dissipation because of low Collector-to-Emitter Voltage VCE(sat), permitting more flashes of light

5 AMPERE POWER TRANSISTORS 1500 VOLTS 50 WATTS

SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)

Silicon NPN Power Transistors

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50W NPN High Power BJT Transistor

Silicon NPN Power Transistors

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Plastic-Encapsulate Transistors

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SOT-89-3L Plastic-Encapsulate Transistors

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TRANSISTOR (NPN)

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Silicon NPN epitaxial planer type

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NPN TRANSISTOR

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NPN Transistors

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GENERAL PURPOSE TRANSISTORS TRANSISTOR

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Plastic-Encapsulate Transistors

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NPN TRANSISTOR

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NPN Plastic Encapsulated Transistor

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NPN Transistors

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NPN Transistors

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NPN Transistors

文件：1.23269 Mbytes Page：2 Pages

NPN Transistors

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