位置：首页 > IC中文资料第5802页 > 2SD600E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
100V/120V,1ALow-FrequencyPowerAmpApplications 1.HighbreakdownvoltageVCEO100/120V,Highcurrent1A. 2.Lowsaturationvoltage,excellenthFElinearity. | SANYOSanyo 三洋三洋电机株式会社 |  |   | |
iscSiliconNPNPowerTransistor DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications | SAVANTIC Savantic, Inc. |  | | |
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB631/631K ·HighbreakdownvoltageVCEO100/120V ·Highcurrent1A ·Lowsaturationvoltage APPLICATIONS ·Forlow-frequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
100V/120V,1ALow-FrequencyPowerAmplifierApplications 文件：126.37 Kbytes Page：4 Pages | SANYOSanyo 三洋三洋电机株式会社 | | |
2SD600E产品属性
- 类型
描述
- 型号
2SD600E
- 功能描述
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
||||
NEC |
2020+ |
TO-126 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
飞利蒲 |
04+ |
TO-126 |
5000 |
||||
NEC |
TO-126 |
13500 |
16余年资质 绝对原盒原盘 更多数量 |
||||
KEC-株式会社 |
24+25+/26+27+ |
TO-126 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
SANYO |
3531 |
进口原装-真实库存-价实 |
|||||
SANYO |
17+ |
TO-126 |
6200 |
||||
SANYO/三洋 |
1846+ |
TO-126 |
5000 |
原装现货!随时可以看货!一片起卖! |
|||
SANYO/国产 |
22+ |
TO126 |
25000 |
原装现货,价格优惠,假一罚十 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
2SD600E芯片相关品牌
2SD600E规格书下载地址
2SD600E参数引脚图相关
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2SD600E数据表相关新闻
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2019-2-15
DdatasheetPDF页码索引
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