2SD239晶体管资料

  • 2SD2390别名:2SD2390三极管、2SD2390晶体管、2SD2390晶体三极管

  • 2SD2390生产厂家

  • 2SD2390制作材料:Si-N+Darl

  • 2SD2390性质:低频或音频放大 (LF)_功率放大 (L)

  • 2SD2390封装形式:直插封装

  • 2SD2390极限工作电压:160V

  • 2SD2390最大电流允许值:10A

  • 2SD2390最大工作频率:55MHZ

  • 2SD2390引脚数:3

  • 2SD2390最大耗散功率:100W

  • 2SD2390放大倍数:β=5000

  • 2SD2390图片代号:B-48

  • 2SD2390vtest:160

  • 2SD2390htest:55000000

  • 2SD2390atest:10

  • 2SD2390wtest:100

  • 2SD2390代换 2SD2390用什么型号代替:BDV67D,2SD1123,2SD1027,2SD1515,

2SD239价格

参考价格:¥9.2234

型号:2SD2390 品牌:Sanken 备注:这里有2SD239多少钱,2025年最近7天走势,今日出价,今日竞价,2SD239批发/采购报价,2SD239行情走势销售排行榜,2SD239报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1560) Application : Audio, Series Regulator and General Purpose

Sanken

三垦

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • With TO-3PN package • Complement to type 2SB1560 • High DC current gain APPLICATIONS • Audio ,regulator and general purpose

ISC

无锡固电

Silicon NPN Darlington Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SB1560 • High DC current gain APPLICATIONS • Audio ,regulator and general purpose

SAVANTIC

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Low VCE(sat)

DGNJDZ

南晶电子

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat)

DGNJDZ

南晶电子

NPN Plastic-Encapsulate Transistors

FEATURE • Low VCE(sat)

SECOS

喜可士

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Low VCE(sat)

JIANGSU

长电科技

Medium Power Transistor

■ Features ● Low saturation voltage ● Collector-emitter voltage =60V ● Pc = 2W (on 40X40X0.7mm ceramic board). ● Complements the 2SB1561.

KEXIN

科信电子

Medium Power Transistor (60V, 2A)

Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

ROHM

罗姆

Medium Power Transistor ( 60V, 2A)

Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

ROHM

罗姆

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low VCE(sat)

DGNJDZ

南晶电子

NPN Plastic-Encapsulate Transistors

FEATURE • Low VCE(sat)

SECOS

喜可士

Medium Power Transistor (60V, 2A)

Features 1) Low saturation voltage , typically VCE (sat) =0.13V at IC / IB =1A /50mA. 2) Collector-emitter voltage =60V 3) Pc = 2W (on 40400.7mm ceramic board). 4) Complements the 2SB1561.

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Wide SOA (safe operating area) • Complement to type 2SB1565

ISC

无锡固电

Power Transistor (60V, 3A)

ROHM

罗姆

For Power Amplification (60V, 3A)

Features 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. Applications Low frequency amplifier

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Wide SOA (safe operating area) • Complement to type 2SB1565

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Wide SOA (safe operating area) • Complement to type 2SB1566

SAVANTIC

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features Low VCE(sat),wide SOA, complements the 2SB1566. Applications Voltage regulator, DC-DC converter and relay driver audio frequency power Amplifier.

FOSHAN

蓝箭电子

For Power Amplification (50V, 3A)

2SB1566 Power Transistor(-50V, -3A) Features 1) Low saturation voltage, typically VCE(sat) = -0.3V at IC / IB = -2A / -0.2A 2) Wide SOA (safe operating area). 3) Complements the 2SD2395. 2SD2395 Power Transistor(50V, 3A) Features 1) Low saturation voltage, typically VCE(sat) = 0.2V at

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Wide SOA (safe operating area) • Complement to type 2SB1566

ISC

无锡固电

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Transistor, NPN

2SD2396 - Low Frequency Transistor (60V, 3A) 2SC5060 - Power Transistor (90 ±10V, 3A)

ROHM

罗姆

Transistor, NPN

2SD2396 - Low Frequency Transistor (60V, 3A) 2SC5060 - Power Transistor (90 ±10V, 3A)

ROHM

罗姆

Medium Power Transistor(Motor, Relay drive) (60짹10V, 2A)

Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to L loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode.

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Transistors

Power Transistor (+/- 100V/ +/- 2A)

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Transistor,NPN,Darlington

DESCRIPTION • available in TO-220FN package • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated • built-in resistors between base and emitter • 2 mm lower than the TO-220FP package which allows higher density mounting • complementary pair wi

ROHM

罗姆

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) • High Switching Speed APPLICATIONS • Switching regulator and high voltage switching applications. • High speed DC-DC converter applications.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SB1568 • High DC current gain. • DARLINGTON APPLICATIONS • For low frequency power amplifier applications

SAVANTIC

Silicon NPN Darlington Power Transistors

文件:172 Kbytes Page:4 Pages

SAVANTIC

Silicon NPN Triple Diffused Planar Transistor

文件:34.17 Kbytes Page:1 Pages

Sanken

三垦

Silicon NPN Triple Diffused Planar Transistor

文件:33.7 Kbytes Page:1 Pages

Sanken

三垦

Medium Power Transistor (60V, 2A)

文件:164.1 Kbytes Page:3 Pages

ROHM

罗姆

NPN小信号三极管

CHINABASE

创基电子

晶体管

JSCJ

长晶科技

Driver Transistor

ROHM

罗姆

Medium Power Transistor (60V, 2A)

文件:164.1 Kbytes Page:3 Pages

ROHM

罗姆

NPN Transistors

文件:1.00801 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.00801 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.00801 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistors

文件:1.00801 Mbytes Page:2 Pages

KEXIN

科信电子

NPN Transistor

文件:484.82 Kbytes Page:4 Pages

PJSEMI

平晶半导体

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 60V 2A MPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

Silicon NPN Power Transistors

文件:209.97 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:215 Kbytes Page:3 Pages

SAVANTIC

TO-220F Plastic-Encapsulate Transistors

文件:772.69 Kbytes Page:3 Pages

JIANGSU

长电科技

3A, 80V P Plastic-Encapsulated Transistor

文件:385.63 Kbytes Page:2 Pages

SECOS

喜可士

Silicon NPN transistor in a TO-220F Plastic Package.

文件:1.20222 Mbytes Page:6 Pages

FOSHAN

蓝箭电子

封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS NPN 60V 3A TO220FN 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ROHM

罗姆

isc Silicon NPN Darlington Power Transistor

文件:254.7 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

文件:254.6 Kbytes Page:2 Pages

ISC

无锡固电

Silicon NPN Power Transistors

文件:207.38 Kbytes Page:3 Pages

SAVANTIC

2SD239产品属性

  • 类型

    描述

  • 型号

    2SD239

  • 制造商

    Sanken Electric Co Ltd

  • 功能描述

    Trans Darlington NPN 150V 10A 3-Pin(3+Tab) TO-3P

  • 制造商

    Sanken Electric Co Ltd

  • 功能描述

    Trans Darlington NPN 150V 10A 3-Pin(3+Tab) TO-3P Box

  • 制造商

    Sanken Electric Co Ltd

  • 功能描述

    TRANS NPN AUDIO/GP MT-100 TO-3P

  • 制造商

    Allegro MicroSystems

  • 功能描述

    DARLINGTON TRANSISTOR TO-3P

  • 制造商

    Allegro MicroSystems

  • 功能描述

    DARLINGTON TRANSISTOR, TO-3P

  • 制造商

    Allegro MicroSystems

  • 功能描述

    TRANSISTOR,BJT,DARLINGTON,NPN,150V V(BR)CEO,10A I(C),TO-247VAR

更新时间:2025-12-25 15:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANKEN
24+
NA
3200
只做原装正品现货 欢迎来电查询15919825718
SANKEN原装正品
25+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
SANKEN
1010+
TO-3p
1216
原装现货海量库存欢迎咨询
SANKEN
20+
TO-218
38900
原装优势主营型号-可开原型号增税票
SANKEN
18+
TO-3P
85600
保证进口原装可开17%增值税发票
SANKEN
19+
明嘉莱只做原装正品现货
2510000
TO-3P
ALGR
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
SANKEN
22+
TO-3P
20000
公司只有原装 品质保证
SANKEN
23+
TO-3P
8500
原厂授权代理,海外优势订货渠道。可提供大量库存,详
SANKEN
160V10A10
8560
一级代理 原装正品假一罚十价格优势长期供货

2SD239数据表相关新闻