For Power Amplification (60V, 3A)

Features 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE. 3) Wide SOA. Applications Low frequency amplifier

Power Transistor (60V, 3A)

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Wide SOA (safe operating area) • Complement to type 2SB1565

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • Low collector saturation voltage • Wide SOA (safe operating area) • Complement to type 2SB1565

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 1.0V(Max) @IC= 2A APPLICATIONS · Low Frequency Amplifier

Driver Transistor

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功率三极管

Silicon NPN Power Transistors

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